Abstract: A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the mask plane, and (ii) a wavefront measurement module (28) which measures the measurement wave after passing through the optical system and determines from the measurement result, with an evaluation device (46), a deviation of the wavefront of the measurement wave from a desired wavefront. The evaluation device (46) determines an influence of an intensity distribution (70) of the illumination radiation in the region of the mask plane on the measurement result and, when determining the deviation of the wavefront, utilizes the influence of the intensity distribution.

Abstract: A measurement apparatus (10) for measuring a wavefront aberration of an imaging optical system (12) includes (i) a measurement wave generating module (24) which generates a measurement wave (26) radiated onto the optical system and which includes an illumination system (30) illuminating a mask plane (14) with an illumination radiation (32), as well as coherence structures (36) arranged in the mask plane, and (ii) a wavefront measurement module (28) which measures the measurement wave after passing through the optical system and determines from the measurement result, with an evaluation device (46), a deviation of the wavefront of the measurement wave from a desired wavefront. The evaluation device (46) determines an influence of an intensity distribution (70) of the illumination radiation in the region of the mask plane on the measurement result and, when determining the deviation of the wavefront, utilizes the influence of the intensity distribution.

Abstract: A microlithographic projection exposure apparatus (10) includes a projection lens (26) that images an object field (22) arranged in a mask plane (24) onto a substrate (28) during exposure operation of the projection exposure apparatus, and an illumination system (16) that has: an exposure illumination beam path (44) for radiating illumination radiation (14) onto the object field on the illumination side with respect to the mask plane, a measurement illumination beam path (48) for irradiating a measurement structure (54) arranged in the mask plane with the illumination radiation, and a scattering structure (50) arranged on the illumination side with respect to the mask plane and outside the exposure illumination beam path. The measurement illumination beam path extends via the scattering structure and runs rectilinearly between the scattering structure and the mask plane.

Abstract: A microlithographic projection exposure apparatus (10) includes a projection lens (26) that images an object field (22) arranged in a mask plane (24) onto a substrate (28) during exposure operation of the projection exposure apparatus, and an illumination system (16) that has: an exposure illumination beam path (44) for radiating illumination radiation (14) onto the object field on the illumination side with respect to the mask plane, a measurement illumination beam path (48) for irradiating a measurement structure (54) arranged in the mask plane with the illumination radiation, and a scattering structure (50) arranged on the illumination side with respect to the mask plane and outside the exposure illumination beam path. The measurement illumination beam path extends via the scattering structure and runs rectilinearly between the scattering structure and the mask plane.

Abstract: An apparatus (10) determining an optical property of an imaging system (12) includes an illumination system (20) directing electromagnetic radiation (18) onto an object plane (22) of the imaging system, a utilization detector (42) determining the optical property, an output coupling device (46), and an intensity sensor (50). The detector captures the radiation after it has traveled along a utilized beam path (45) extending to the utilization detector. The output coupling device couples sensor radiation (48) out of the utilized beam path and into a sensor beam path (49) that differs from the utilized beam path. The intensity sensor records an angularly resolved intensity distribution present at least at one point in the object plane of the optical imaging system, which intensity distribution reproduces the intensity of the electromagnetic radiation in dependence on the angle of incidence with respect to the object plane.

Abstract: A measuring system (10) for measuring an imaging quality of an EUV lens (30) includes a diffractive test structure (26), a measurement light radiating device (16) which is configured to radiate measurement light (21) in the EUV wavelength range onto the test structure, a variation device (28) for varying at least one image-determining parameter of an imaging of the test structure that is effected by a lens, a detector (14) for recording an image stack including a plurality of images generated with different image-determining parameters being set, and an evaluation device (15) which is configured to determine the imaging quality of the lens from the image stack.

Abstract: An objective for a projection exposure apparatus includes a metrology stage arranged on the frame of the objective. The objective includes at least one optical component, an objective mount for mounting the optical component, and a positioning device for holding at least one measuring device. The positioning device is connected to the objective mount and has at least one degree of freedom of displacement for displacing the measuring device.

Abstract: An apparatus (10) determining an optical property of an imaging system (12) includes an illumination system (20) directing electromagnetic radiation (18) onto an object plane (22) of the imaging system, a utilization detector (42) determining the optical property, an output coupling device (46), and an intensity sensor (50). The detector captures the radiation after it has traveled along a utilized beam path (45) extending to the utilization detector. The output coupling device couples sensor radiation (48) out of the utilized beam path and into a sensor beam path (49) that differs from the utilized beam path. The intensity sensor records an angularly resolved intensity distribution present at least at one point in the object plane of the optical imaging system, which intensity distribution reproduces the intensity of the electromagnetic radiation in dependence on the angle of incidence with respect to the object plane.

Abstract: A measuring system (10) for measuring an imaging quality of an EUV lens (30) includes a diffractive test structure (26), a measurement light radiating device (16) which is configured to radiate measurement light (21) in the EUV wavelength range onto the test structure, a variation device (28) for varying at least one image-determining parameter of an imaging of the test structure that is effected by a lens, a detector (14) for recording an image stack including a plurality of images generated with different image-determining parameters being set, and an evaluation device (15) which is configured to determine the imaging quality of the lens from the image stack.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: An objective for a projection exposure apparatus includes a metrology stage arranged on the frame of the objective. The objective includes at least one optical component, an objective mount for mounting the optical component, and a positioning device for holding at least one measuring device. The positioning device is connected to the objective mount and has at least one degree of freedom of displacement for displacing the measuring device.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A method and apparatus for spatially resolved wavefront measurement on a test specimen, a method and apparatus for spatially resolved scattered light determination, a diffraction structure support and a coherent structure support therefor, and also an objective or other radiation exposure device manufactured using such a method, and an associated manufacturing method. An embodiment involves carrying out, for the wavefront measurement, a first shearing measuring operation, which includes a plurality of individual measurements with at least two first shearing directions and spatially resolved detection of shearing interferograms generated, and an analogous second shearing measuring operation with at least one second shearing direction, the at least one second shearing direction being non-parallel to at least one first shearing direction. From the shearing interferograms detected, it is possible e.g.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device and method for the interferometric measurement of phase masks, particularly from lithography. Radiation passing through a coherence mask is brought to interference by a diffraction grating. A phase mask is arranged in or near the pupil plane of the first imaging optics which can be positioned exactly in the x-y direction by which interferograms are generated which are phase-shifted in the x-y direction by translational displacement of the coherence mask or of the diffraction grating. The interferograms are imaged onto the spatially resolving detector by second imaging optic and the phase and transmission functions of the phase mask are determined by an evaluation unit. The invention can, of course, generally be applied to planar phase objects, such as biological structures, for example, points of establishment with respect to an interference microscope.

Abstract: A method of manufacturing a miniaturized device comprises disposing a patterning structure to be imaged in a region of an object plane of an imaging optics of the projection exposure system; disposing a substrate carrying a resist in a region of an image plane of the imaging optics and exposing portions of the substrate with images of the patterning structure using the projection exposure system; maintaining a flow of an immersion liquid to and from a space between the substrate and a front lens of the imaging optics closest to the substrate; measuring a physical property which is indicative of at least one of a refractive index of the immersion liquid and a change of the refractive index of the immersion liquid over time, wherein the physical property is measured using a beam of measuring light interacting with the immersion liquid; adjusting at least one optical property of the projection exposure system based on the measured physical property; exposing further portions of the substrate with images of the p

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.

Abstract: Methods and apparatus for measuring wavefronts and for determining scattered light, and related devices and manufacturing methods. 2.1. The invention relates to a method and apparatus for spatially resolved wavefront measurement on a test specimen, a method and apparatus for spatially resolved scattered light determination, a diffraction structure support and a coherent structure support therefor, and also to an objective or other radiation exposure device manufactured using such a method, and an associated manufacturing method. 2.2.