Abstract: A method for producing a contact hole to a first doped region of a first conductivity type in a semiconductor wafer having doped regions of the first and of a second conductivity type, includes producing a first doped region in a substrate having a surface, and bounding the first doped region with insulation regions at least at the surface of the substrate. A diffusion barrier layer is produced leaving at least the first doped region free and covering a second doped region of a second conductivity type. An undoped silicon layer is deposited over the entire surface. A doped region is selectively produced in the silicon layer by implantation, and the doped region overlaps a region for a contact hole. Undoped portions of the silicon layer are selectively removed relative to the doped region. An insulation layer is produced over the entire surface. A contact hole is opened in the insulation layer by selective anisotropic etching relative to the doped region of the silicon layer.