Patents by Inventor Helmut Joswig

Helmut Joswig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5731218
    Abstract: A method for producing a contact hole to a first doped region of a first conductivity type in a semiconductor wafer having doped regions of the first and of a second conductivity type, includes producing a first doped region in a substrate having a surface, and bounding the first doped region with insulation regions at least at the surface of the substrate. A diffusion barrier layer is produced leaving at least the first doped region free and covering a second doped region of a second conductivity type. An undoped silicon layer is deposited over the entire surface. A doped region is selectively produced in the silicon layer by implantation, and the doped region overlaps a region for a contact hole. Undoped portions of the silicon layer are selectively removed relative to the doped region. An insulation layer is produced over the entire surface. A contact hole is opened in the insulation layer by selective anisotropic etching relative to the doped region of the silicon layer.
    Type: Grant
    Filed: December 19, 1996
    Date of Patent: March 24, 1998
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hanno Melzner, Helmut Joswig, Wolfgang Muller