Abstract: This invention relates to an inverse planar transistor in which a base region of one conductivity type is formed in a semiconductor body of the opposite conductivity type adjacent a planar surface thereof. The collector of the transistor is provided by a Schottky contact on a portion of the outer face of the base region. A highly doped protective ring of the opposite conductivity type to that of the base region is provided for the Schottky contact. An enlarged thickness of the passivation layer adjacent the opening therethrough to provide an effective guard ring. A relatively highly doped buried layer of said opposite conductivity type is located in the semiconductor body below and spaced from the inner surface of the base region. The portion of the semiconductor body lying between the base region and the buried layer together with the buried layer form the emitter of the transistor. A highly doped region of the said opposite conductivity type extends from the planar surface to the buried layer.