Abstract: At the ENUM introductory phase, a problem occurs when a called subscriber is not registered in the ENUM directory listing. In such a situation, a calling subscriber can initiate the ENUM request but it receives an error message only since no inscription exists in the ENUM registration with respect to said FQDN. The aim of said invention is to shorten said introductory phase. According to the invention, the subscriber called according to the ENUM request, is thereby informed about possibilities offered by the ENUM system in the case when the DNS registration is not available.

Abstract: A method and circuit for simultaneously establishing communication links between a subscriber station connected to a switching center of a communication network via a single subscriber line and other subscriber stations connected to the same communication network wherein, the relevant subscriber line is operated as a multi-channel multiplex line, between the switching center and a translating device which is preferably provided at the transition to another communication network, especially the Internet, a multi-channel multiplex junction line, on the one hand, and, on the other hand, a number of individual junction lines exist, in the translating device, a demultiplexer/multiplexer which is used for the respective transition from a multiplex link to individual connections and conversely is located between the multiplex junction line and the individual junction lines.

Abstract: An amplifying surface wave receiver for a surface wave element composed of a material which exhibits the piezo effect and which can be rendered electrically conductive by local doping, where a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and which is composed of piezo electric material, said doped region forms a conductive channel (7) between at least two contact electrodes which are spaced a defined distance from each other, and the conductive channel (7) formed such that occurring piezo charges are positioned so as to modulate the conductivity of said channel. One terminal of a voltage source (4) is connected to one of the contact electrodes (6) and the other terminal is connected to the other contact electrode (6) through an alternating current detector (5).

Abstract: An amplifying surface wave receiver for a surface wave element composed of a material which has the piezo effect and which can be rendered electrically conductive by local doping wherein a doped region is formed at the upper portion of an insulating substrate body (8) which forms the surface wave element and said doped region forms a conductive channel (7) between at least two contact electrodes (3, 3') which have a defined distance from each other and in the channel thus formed the occurring piezo charges are positioned so as to modulate the conductivity of the channel. One pole terminal of a voltage source (4) is connected to one of the contact electrodes (3) and the other pole terminal is connected to the other contact electrode (3') through an alternating current detector (5).

Abstract: An integrated circuit structure to be built on a semiconductor substrate wafer for the purpose of undertaking a quality check of the wafer has a plurality of field effect transistors laterally disposed in the same close adjacency as transistors which are to be manufactured on a chip using the wafer material. Each field effect transistor has its own well structure, its own source structure, and its own drain structure. The individual field effect transistors have pads allocated thereto at an edge of the structure. Each transistor source/drain structure is connected to the pads by a conductor, the totality of these conductors having width and/or length dimensions so that each run has approximately the same resistance. Only one common gate conductor for all of the transistors is provided.

Abstract: A method for high-precision imaging of electrical barrier layers (pn-junctions) in semiconductors by means of processing particle beam induced signals created during scanning with a corpuscular microscope, even when the electrical barrier layers are aligned perpendicularly or obliquely relative to a specimen surface. The path of the pn-junctions in cross-sections through semiconductor components may be identified with a high reliability such as within 0.1 .mu.m. Specific point (P(x,y), P(x+.DELTA.x, y+.DELTA.y), M(x,y), N(x,y), F(x,y)) is defined and particle beam induced signals generated along a scan line containing this specific point is compared with reference to particle beam induced signals generated along a further scanning line containing a point within a certain environment of the specific point first chosen with the comparison results being used to localize the electric barrier region profile.

Abstract: A method is provided for measuring electrical potentials at solid state matter wherein an ionizing radiation is directed against a measuring point at the surface, whereby a conductive connection between the measuring point at the surface and a measuring point at the solid state matter is produced, its electrical potential to be measured. Electrical potentials are measured at a solid state substance even when the solid state matter is hidden beneath at least one conductive layer and at least one insulating layer. The electrical potential at the solid state matter is identified by measuring induced specimen current.