Abstract: A method for manufacturing micromechanical components, and a micromechanical component, in which a movable element is produced on a sacrificial layer. In a subsequent step the sacrificial layer beneath the movable element is removed so that the movable element becomes movable. After removal of the sacrificial layer, a protective layer is deposited on a surface of the movable element. Silicon oxide and/or silicon nitride is used for the protective layer.

Abstract: The invention proposes a method for manufacturing micromechanical components, and a micromechanical component, in which a movable element (4) is produced on a sacrificial layer (2). In a subsequent step the sacrificial layer (2) beneath the movable element (4) is removed so that the movable element (4) becomes movable. After removal of the sacrificial layer (2), a protective layer (7) is deposited on a surface of the movable element (4). Silicon oxide and/or silicon nitride is used for the protective layer (7).

Abstract: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

Abstract: A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.