Abstract: A polymer based coating for application to rolled stock, such as aluminum is provided. A device for applying the polymer based coatings is also provided. Polymer based coatings applied to rolled stock, such as aluminum, are advantageous compared to anodized coatings since the polymers are self-leveling and may be applied to lower grades of aluminum, while still providing a smooth and durable surface finish.

Abstract: A polymer based coating for application to rolled stock, such as aluminum is provided. A device for applying the polymer based coatings is also provided. Polymer based coatings applied to rolled stock, such as aluminum, are advantageous compared to anodized coatings since the polymers are self-leveling and may be applied to lower grades of aluminum, while still providing a smooth and durable surface finish.

Abstract: A process is provided in which a metal chelating agent is dissolved in an aqueous or glycol-based cooling fluid to form a chelating solution with a chelating agent concentration. A silicon boule is cut with a saw to detach a silicon wafer from the boule while the interface between the silicon boule and the saw is bathed with the chelating solution during the cutting.

Abstract: A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical properties of an insulator or semiconductor substrate. The process includes the exposure of the substrate to an aqueous solution of at least one compound of the formula: (I) where n in each occurrence is independently an integer value between 0 and 6, and X is independently in each occurrence H, NR4, Li, Na or K and at least one of X is NR4; where R in each occurrence is independently H or C1-C6 alkyl, to improve electrical performance of the substrate. A kit for preparing such a solution includes a 1-20 total weight percent aqueous concentrate of at least one compound of formula (I). The kit also provides instructions for the dilution of the concentrate to form the solution.

Abstract: An integrated cleaner for processing disks is provided. The integrated cleaner includes a pair of spaced apart scrubbers each having a plurality of spaced apart brushes disposed along a length of the scrubbers, the pair of spaced apart scrubbers oriented horizontally and configured to receive a vertically oriented disk therebetween. A track is disposed below a gap defined between the pair of spaced apart scrubbers. The track guides an edge of the disk as the disk travels between ends of the pair of spaced apart scrubbers. The plurality of spaced apart brushes includes a first and/or second pair of opposing brushes having a roughness that is greater than a second and/or third pair of brushes downstream from the first and/or second pair of brushes, respectively. The integrated cleaner includes an edge cleaner configured to exert a force along an edge of the vertically oriented disk during a portion of travel of the vertically oriented disk along the track. A method of cleaning a substrate is also provided.

Abstract: A method for cleaning and polishing a disk is provided. The method includes planarizing the disk and transferring the planarized disk to a first station of a polishing module. At the first station opposing sides of the disk are simultaneously polished as the disk rotates around an axis of the disk. The polishing includes continuously advancing a first polishing member contacting a first surface of the disk and a second polishing member contacting a second surface of the disk, wherein the advancing of the first polishing member independent of the advancing of the second polishing member. The method includes transferring the disk to a second station of the polishing module.

Abstract: An apparatus for supporting a work piece is provided. The apparatus includes outer support rails having support slots for supporting the work piece, the outer support rails disposed on opposing sides of the apparatus between opposing end members of the apparatus. Inner support rails extend between the opposing end members of the apparatus. An inner surface of each of the inner support rails has vertically disposed extensions extending therefrom. The vertically disposed extensions are aligned in pairs along a length of the inner support rails. A moveable device is disposed between the pairs of vertically disposed extensions. The moveable device is buoyantly moveable so that as the work piece is lifted, the moveable device follows. A method for cleaning a work piece is also included.

Abstract: A process for forming an oxide-containing film from silicon is provided that includes heating the silicon substrates to a process temperature of between 250° C. and 1100° C. with admission into the process chamber of diatomic reductant source gas Z-Z? where Z and Z? are each H, D and T and a stable source of oxide ion. Multiple exhaust ports exist along the vertical extent of the process chamber to create reactant across flow. A batch of silicon substrates is provided having multiple silicon base layers, each of the silicon base layers having exposed <110> and <100> planes and a film residual stress associated with the film being formed at a temperature of less than 600° C. and having a <110> film thickness that exceeds a <100> film thickness on the <100> crystallographic plane by less than 20%, or a film characterized by thickness anisotropy less than 18% and an electrical breakdown field of greater than 10.5 MV/cm.

Abstract: A process for radical assisted film deposition simultaneously on multiple wafer substrates is provided. The multiple wafer substrates are loaded into a reactor that is heated to a desired film deposition temperature. A stable species source of oxide or nitride counter ion is introduced into the reactor. An in situ radical generating reactant is also introduced into the reactor along with a cationic ion deposition source. The cationic ion deposition source is introduced for a time sufficient to deposit a cationic ion-oxide or a cationic ion-nitride film simultaneously on multiple wafer substrates. Deposition temperature is below a conventional chemical vapor deposition temperature absent the in situ radical generating reactant.

Abstract: The present invention provides a method for depositing a ruthenium metal compound containing film on one or more substrates. The desired metal compound is first dissolved in a suitable solvent. The precursor mixture is then vaporized and delivered to a process chamber to be used in the deposition of the metal compound on the substrates by process methods comprising CVD, MOCVD, ALD, and the like. This method results in the deposition of high quality, substantially uniform films. Additionally, the method makes efficient use of the metal compound component and reduces the cost for the deposition of the metal compound.

Abstract: An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an across-flow liner to improve gas flow uniformity across the surface of each substrate. The across-flow liner of the present invention includes a longitudinal bulging section to accommodate a across-flow injection system. The liner is patterned and sized so that it is conformal to the wafer carrier, and as a result, reduces the gap between the liner and the wafer carrier to reduce or eliminate vortices and stagnation in the gap areas between the wafer carrier and the liner inner wall.

Abstract: Methods for forming silicon containing films using silylamine moieties are disclosed. In some embodiments, silylamine moieties are employed to deposit silicon-nitrogen, silicon-oxygen, or silicon-nitrogen-oxygen materials at temperatures of less than 550° C. In some embodiments methods are practiced within process chambers adapted to contain a single substrate as well as within process chambers adapted to contain a plurality of substrates, where the silylamine moieties are conveyed to the chambers in across flow type manner.

Abstract: A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant.

Abstract: The present invention provides systems and methods for forming a multi-layer, multi-component high-k dielectric film. In some embodiments, the present invention provides systems and methods for forming high-k dielectric films that comprise hafnium, titanium, oxygen, nitrogen, and other components. In a further aspect of the present invention, the dielectric films are formed having composition gradients.

Abstract: In one aspect, the present invention provides a method and apparatus configured to form dielectric films or layers at low temperature. In one embodiment dielectric films such as silicon nitride (SixNy) and silicon dioxide (SiO2) are deposited at temperatures equal to or below 550° C. In a further aspect of the present invention, a method and apparatus configured to provide cross flow injection of reactant gases is provided. In one embodiment, reactant gasses (such as a monomolecular precursor and NH3) flow into vertically positioned adjustable injectors that mix reactants prior to injection into the wafer region.

Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

Abstract: A unique photoresist strip sequence using a downstream plasma system is described. The sequence can include a RF directional plasma alone, downstream plasma alone or combine both RF plasma and downstream plasma together. The process sequence can be a single step or multiple steps, which produce high strip rates while maintaining the dielectric properties of the film. The process can be an oxidizing process carried out at low temperature and low pressure, which reduces the reactivity of the oxygen with the low-k film. Furthermore, by adding a small percentage of an additive gas, such as a fluorine-containing gas, to the plasma, the inorganic residues from the strip process are removed, leaving a clean film cleared of photoresist and residue.

Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

Abstract: A method that involves spraying a liquid agitated with a sonic wave at a megasonic frequency onto a substrate from a nozzle positioned over the substrate. Simultaneously, the substrate is spun above 300 RPM while the nozzle is swept over the substrate. The substrate may be brushed in a brush station before agitating the liquid with the sonic wave. An apparatus having an arm in fluid communication with a nozzle that has an angular position &thgr; greater than 0°. Also, there is a substrate spinner positioned below the nozzle.

Abstract: A method and apparatus for processing a wafer are described. In one embodiment, a method for processing a wafer comprises applying a sealing mechanism to the wafer to create multiple separate, sealed portions of the wafer, and applying a plurality of different chemistries to multiple separate, sealed portions of the wafer through the sealing mechanism.