Abstract: Systems and methods are disclosed herein to provide test features for integrated circuits. For example, in accordance with an embodiment of the present invention, an integrated circuit includes an input signal path adapted to route an address signal for a configurable memory. An input multiplexer, coupled to the input signal path, is controllable to route a first test signal provided via the input signal path for at least one memory configuration that does not use the input signal path for the address signal.

Abstract: A multiport memory in one embodiment of the invention includes a memory cell array, where each column in the array has two exterior complementary bitline pairs and zero, one, or more interior complementary bitline pairs. Across each pair of adjacent columns in the array, the adjacent exterior bitline pairs are associated with the same port in the multiport memory. In addition, within each column, the two exterior bitline pairs have the same, non-zero number of crossovers, and, across each pair of adjacent columns, the exterior bitline pairs have different numbers of crossovers. Furthermore, each column has at least one reference signal line located between the two exterior bitline pairs.

Abstract: Systems and methods are disclosed herein for decoder applications. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a decoder that receives a plurality of input signals and partially decodes the input signals based on their true and complement values to provide a plurality of decoded signals. The decoded signals, for example, may be utilized to control a multiplexer.

Abstract: Systems and methods provide improved address decoding techniques for memory. For example, in accordance with an embodiment of the present invention, an integrated circuit includes an address register that receives a reset signal, a clock signal, and an address signal and provides a registered address signal. The registered address signal provides at least a true and a complement signal, with the true and complement signal set to approximately the same logical value upon assertion of the reset signal. An address pre-decoder, coupled to the address register, at least partially decodes the registered address signal to provide a pre-decoded output signal. A wordline driver, coupled to the address pre-decoder, receives a wordline enable signal and the pre-decoded output signal and provides a wordline signal based on the pre-decoded output signal upon assertion of the wordline enable signal.

Abstract: In one embodiment of the invention, a pulse-generation circuit for generating control signals has clock-delay circuitry for generating a plurality of differently delayed clock signals. Each control signal is generated by a set-reset latch that receives its set and reset signals from different pulse generators operating based on different delayed clock signals from the clock-delay circuitry. In one implementation, the clock-delay circuitry has a partitioned delay block in which different sub-blocks provide different delay functionality to provide the clock-delay circuitry with programmable flexibility.

Abstract: Systems and methods disclosed herein provide for variable data width memory. For example, in accordance with an embodiment of the present invention, a technique for doubling a width of a memory is disclosed, without having to increase a width of the internal data path or the number of input/output pads.

Abstract: Systems and methods provide bit line coupling detection techniques for multi-port memory applications. For example, in accordance with an embodiment of the present invention, a memory includes at least one column of memory having a plurality of memory cells and at least two ports and a dummy column having a dummy memory cell and a first port and a second port. At least one bit line is provided for each port of the columns of memory and the dummy column, with the dummy column adapted to provide a read timing indication by performing a write operation through the first port at substantially the same time as a read operation through the second port.

Abstract: Systems and methods are disclosed herein to provide techniques for writing to certain bits of a word location in a memory. For example, in accordance with an embodiment of the present invention, a method of implementing byte enable logic for a memory is disclosed, with the byte enable logic signals provided on one or more address lines.

Abstract: In accordance with an embodiment of the present invention, a programmable logic device includes a plurality of logic blocks, a plurality of memory blocks, and a plurality of continuation routing paths associated with the memory blocks. A plurality of continuation multiplexers, coupled to the continuation routing paths, are adapted to route signals between the memory blocks, between the logic blocks, and/or between the memory blocks and the logic blocks.

Abstract: Systems and methods provide sense amplifier timing techniques. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a plurality of memory cells and a sense amplifier that provides a sense amplifier output signal based on data provided by the plurality of memory cells, with the sense amplifier output signal provided under control of a sense amplifier enable signal. A delay control circuit provides a delay to the sense amplifier enable signal based on a value provided by at least one configuration fuse.

Abstract: A programmable memory cell formed useful in a memory array having column bitlines and row wordlines. The memory cell including a breakdown transistor having its gate connected to a program wordline and a write transistor connected in series at a sense node to said breakdown transistor. The gate of the write transistor is connected to a write wordline. Further, a first sense transistor has its gate connected to the sense node. A second sense transistor is connected in series to the first sense transistor and has its gate connected to a read wordline. The second sense transistor has its source connected to a column bitline.

Abstract: Systems and methods provide output data from a memory. For example, in accordance with an embodiment of the present invention, techniques are disclosed for providing glitch-free output data from a memory through feedback of the output data signal.

Abstract: Systems and methods are disclosed for memory, including techniques for reading and writing to memory. For example, in accordance with an embodiment of the present invention, a method of implementing a read and a write operation (e.g., a read before write operation) is disclosed for a memory, such as for example for a single port or a multiport memory, with the write operation beginning prior to the completion of the read operation.

Abstract: Memory cell arrays are defined by rows and columns of memory cells that are addressed by sets of bitlines associated with a first memory port and a second memory port. The bitlines associated with the first memory port have bitline exchanges associated with a first set of memory cell rows and the bitlines associated with the second memory port have bitline exchanges associated with a second set of memory cell rows. The memory cells can have the same design, and all memory cell columns can have the same design. Read/write logic for the arrays can be based on memory cell row addresses.

Abstract: A method and apparatus for generating an echo clock is described. An echo clock is an output strobe signal that selectively follows an input clock signal in a synchronous memory system and indicates when valid output data is available. The same clock signals used to change the state of an echo clock are used to output data from a memory buffer. The data buffer and echo clock buffer/generator are substantially identical in construction and operation, thereby ensuring a close correlation between a change in state of the echo clock and the availability of valid data. Such a memory provides matching of the echo clock transitions with that of the data signals on the data lines of the memory for any frequency range.