Patents by Inventor Hemant Adhikari
Hemant Adhikari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8859389Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.Type: GrantFiled: January 28, 2011Date of Patent: October 14, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara
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Patent number: 8815658Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.Type: GrantFiled: August 13, 2012Date of Patent: August 26, 2014Assignee: Advanced Micro Devices, Inc.Inventors: Hemant Adhikari, Rusty Harris
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Patent number: 8716074Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: September 12, 2012Date of Patent: May 6, 2014Assignee: GlobalFoundries, Inc.Inventors: Witold Maszara, Hemant Adhikari
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Patent number: 8420464Abstract: A method of fabricating a semiconductor device that includes at least two fin structures, wherein one of the at least two fin structures include epitaxially formed in-situ doped second source and drain regions having a facetted exterior sidewall that are present on the sidewalls of the fin structure. In another embodiment, the disclosure also provides a method of fabricating a finFET that includes forming a recess in a sidewall of a fin structure, and epitaxially forming an extension dopant region in the recess that is formed in the fin structure. Structures formed by the aforementioned methods are also described.Type: GrantFiled: May 4, 2011Date of Patent: April 16, 2013Assignees: International Business Machines Corporation, Globalfoundries Inc.Inventors: Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier, Sivananda K. Kanakasabapathy, Hemant Adhikari
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Publication number: 20130005114Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: GLOBALFOUNDRIES INC.Inventors: Witold MASZARA, Hemant ADHIKARI
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Patent number: 8334177Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: October 20, 2011Date of Patent: December 18, 2012Assignee: GLOBALFOUNDRIES, Inc.Inventors: Witold Maszara, Hemant Adhikari
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Publication number: 20120309141Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.Type: ApplicationFiled: August 13, 2012Publication date: December 6, 2012Inventors: Hemant Adhikari, Rusty Harris
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Publication number: 20120280250Abstract: A method of fabricating a semiconductor device that includes at least two fin structures, wherein one of the at least two fin structures include epitaxially formed in-situ doped second source and drain regions having a facetted exterior sidewall that are present on the sidewalls of the fin structure. In another embodiment, the disclosure also provides a method of fabricating a finFET that includes forming a recess in a sidewall of a fin structure, and epitaxially forming an extension dopant region in the recess that is formed in the fin structure. Structures formed by the aforementioned methods are also described.Type: ApplicationFiled: May 4, 2011Publication date: November 8, 2012Applicants: GLOBALFOUNDRIES INC., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier, Sivananda K. Kanakasabapathy, Hemant Adhikari
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Patent number: 8288756Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.Type: GrantFiled: November 30, 2007Date of Patent: October 16, 2012Assignee: Advanced Micro Devices, Inc.Inventors: Hemant Adhikari, Rusty Harris
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Publication number: 20120193751Abstract: Methods of making fins and semiconductor structures containing fins are provided. The methods involve forming a multi-layer structure over a semiconductor substrate. The multi-layer structure comprises a first layer over the semiconductor substrate, a second layer over the first layer, and a third layer over the second layer. The method also comprises removing upper portions of the semiconductor substrate and portions of the multi-layer structure to form fins of the semiconductor substrate and portions of the multi-layer structure. Further, the method comprises selectively oxidizing the first layer while oxidization of the second layer and the third layer is less than the oxidization of the first layer. The oxidation can be performed before gap fill recess or after gap fill recess.Type: ApplicationFiled: January 28, 2011Publication date: August 2, 2012Applicants: TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Hirohisa Kawasaki, Basker Veeraraghavan, Hemant Adhikari, Witold Maszara
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Publication number: 20120040517Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: October 20, 2011Publication date: February 16, 2012Applicant: GLOBALFOUNDRIES INC.Inventors: Witold MASZARA, Hemant ADHIKARI
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Patent number: 8101486Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: GrantFiled: October 7, 2009Date of Patent: January 24, 2012Assignee: GLOBALFOUNDRIES Inc.Inventors: Witold Maszara, Hemant Adhikari
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Publication number: 20110081764Abstract: Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.Type: ApplicationFiled: October 7, 2009Publication date: April 7, 2011Applicant: GLOBALFOUNDRIES Inc.Inventors: Witold MASZARA, Hemant ADHIKARI
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Publication number: 20090140294Abstract: The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer.Type: ApplicationFiled: November 30, 2007Publication date: June 4, 2009Inventors: HEMANT ADHIKARI, RUSTY HARRIS