Patents by Inventor Hemantha Wichramasinghe

Hemantha Wichramasinghe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change memory cell and method of fabricating the phase-change memory cell
    Patent number: 7459266
    Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
    Type: Grant
    Filed: June 13, 2005
    Date of Patent: December 2, 2008
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Simone Raoux, Hemantha Wichramasinghe
  • Phase-change memory cell and method of fabricating the phase-change memory cell
    Patent number: 6936840
    Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: August 30, 2005
    Assignee: International Business Machines Corporation
    Inventors: Jonathan Zanhong Sun, Simone Raoux, Hemantha Wichramasinghe
  • PHASE-CHANGE MEMORY CELL AND METHOD OF FABRICATING THE PHASE-CHANGE MEMORY CELL
    Publication number: 20050167656
    Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Sun, Simone Raoux, Hemantha Wichramasinghe