Abstract: A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.

Abstract: A memory cell (and method of fabricating the memory cell) includes a stencil layer having a first opening, a phase-change material layer formed on a first electrode layer, and an electrically conductive layer formed on the first electrode layer, the electrically conductive layer having a pillar-shaped portion which is formed on the phase-change material layer and fills the first opening.

Abstract: An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.

Abstract: An assembly and method for recording and/or reading high-density data includes a phase change media, an antenna placed adjacent the phase change media, and a source of electromagnetic radiation.

Abstract: A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.

Abstract: A memory device or a logic device that uses an electronically scannable multiplexing device capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.

Abstract: An electronically scannable multiplexing device is capable of addressing multiple bits within a volatile or non-volatile memory cell. The multiplexing device generates an electronically scannable conducting channel with two oppositely formed depletion regions. The depletion width of each depletion region is controlled by a voltage applied to a respective control gate at each end of the multiplexing device. The present multi-bit addressing technique allows, for example, 10 to 100 bits of data to be accessed or addressed at a single node. The present invention can also be used to build a programmable nanoscale logic array or for randomly accessing a nanoscale sensor array.

Abstract: A method and apparatus for separating molecules comprises placing different kinds of molecular species onto a probe; and introducing an electric field between the probe and a surface in proximity with the probe so that the different kinds of molecular species may be separated, wherein the different kinds of molecular species have differing mobilities, and wherein the different kinds of molecular species may be separated according to their differing mobilities, such that molecular species that have different mobilities migrate along the probe at different speeds towards the surface. The molecular species may comprise molecules. Alternatively, the molecular species may comprise molecular assemblies, wherein the molecular assemblies may comprise at least one of cells, bacteria, and viruses.

Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Abstract: A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.

Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.

Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.

Abstract: A heating device for a magnetic recording head includes first and second separating layers, the first separating layer having preferably a higher or equal thermal resistance than the first separating layer, and a heater formed between the first and second separating layers. A magnetic recording head for recording on magnetic medium includes a heating device which generates a heat spot on the magnetic medium which is larger than a magnetic track width, and/or heats a portion of the magnetic recording head which is on a leading edge side of a write gap in the magnetic recording head.