Patents by Inventor Hemantkumar Narsinham Aiyer

Hemantkumar Narsinham Aiyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Absorber layer for thin film photovoltaics and a solar cell made therefrom
    Patent number: 8779283
    Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: July 15, 2014
    Assignee: General Electric Company
    Inventors: Sheela Kollali Ramasesha, Sundeep Kumar, Mohandas Nayak, Atanu Saha, Hemantkumar Narsinham Aiyer
  • ABSORBER LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM
    Publication number: 20090139573
    Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.
    Type: Application
    Filed: February 29, 2008
    Publication date: June 4, 2009
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Sheela Kollali Ramasesha, Sundeep Kumar, Mohandas Nayak, Atanu Saha, Hemantkumar Narsinham Aiyer