Abstract: A kind of growth method of Fe3Nin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films are obtained.

Abstract: A kind of growth method of Fe3N, and the growth is in the MOCVD system, including following process: 1). the surface nitridation of sapphire substrate would be made; 2). pump in carrier gas N2, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3). the temperature would be raised and grow the GaN supporting layer; 4). pump in FeCp2 as Fe sources, then grow Fe3N on the GaN supporting layer; the Fe3N granular films and the Fe3N single crystal films could be obtained. The invention realizes growing high quality Fe3N film. According to the problem of growing material with difficulty, the problems are solved by controlling and adjusting the conditions for the flux of organic gallium source and iron source, growth temperature, growth time, the flux of ammonia, and mole ratio of N and Ga. In the invention, the method is easy, the growth process could be controlled, and thus the growth method and the process control of growth technology have advancement.