Abstract: Processes for conductive material nanogap formation have been developed that include: providing a base material, wherein the base material is either solid or comprises a micropore that extends through the first layered material, and wherein the micropore comprises a top opening, a bottom opening, and a volume boundary, applying a conductive material sheet to the first layered material, wherein the conductive material sheet covers the top opening of the micropore, applying two conducting electrodes to the conductive material sheet, so that each one of the conducting electrodes is positioned on either side of the micropore, applying an etch mask that covers at least a part of the conductive material sheet, the top opening of the micropore (if present), or a combination thereof, applying a passivation layer over at least the etch mask, fabricating a hole in the passivation layer directly above the top opening of the micropore, and applying at least one voltage pulse through the at least one conducting electrode