Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: Among many embodiments, a power converter and a method for operating a power converter are disclosed. The power converter may include a pair of switches connected in series, an output transformer connected to a common node between the switches and a protection apparatus for protecting each switch from being hard driven, each switch being enabled by a gate signal and turning ON in alternating half cycles so as to drive transformer current in alternate directions through the transformer. The protection apparatus may include: a detector configured to detect whether an intrinsic diode in a first switch is conducting the transformer current; and a gate signal disabler configured in response to the detector blocking an ON gate pulse from reaching a second switch in the pair of switches so that the second switch is not turned ON while the intrinsic diode of the first switch is conducting.

Abstract: Among many embodiments, a power converter and a method for operating a power converter are disclosed. The power converter may include a pair of switches connected in series, an output transformer connected to a common node between the switches and a protection apparatus for protecting each switch from being hard driven, each switch being enabled by a gate signal and turning ON in alternating half cycles so as to drive transformer current in alternate directions through the transformer. The protection apparatus may include: a detector configured to detect whether an intrinsic diode in a first switch is conducting the transformer current; and a gate signal disabler configured in response to the detector blocking an ON gate pulse from reaching a second switch in the pair of switches so that the second switch is not turned ON while the intrinsic diode of the first switch is conducting.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

Abstract: This invention teaches an arc detection and arc reduction circuit for use with power supplies for delivering power to a plasma processing system that utilizes a resonant circuit that stores energy and when the voltage drops between the cathode and anode of the processing chamber the stored energy generates a current in a current transformer in response to the voltage change to switch a magnetically coupled inductor in parallel with the cathode and anode causing a reversal of the voltage that reduces arcs in the plasma chamber. In an alternate embodiment the magnetically coupled inductor is replaced by a pulse transformer and the pulse transformer is placed in parallel with the cathode and anode causing a reversal of the voltage that reduces arcs in the plasma chamber.