Abstract: Suitable starting materials for the manufacture of a heavy metal fluoride glass composition are mixed with solid xenon fluoride as the fluoridizing reagent, after which the mixture is heated to temperatures between 200.degree. and 400.degree. C. in an inert atmosphere for a time which suffices to bring about fluoridation of the starting materials. The intermediate product thus obtained is melted thereby forming a stable glass composition of a high purity and a high transparency. The method can be carried out in a simple manner in a furnace which need not be gastight.

Abstract: A method of manufacturing a passive display device (FIG. 1) is set forth having two substrates (1, 4) which are provided with fixed electrodes and a movable electrode (10) which is located between the substrates, which electrode lies against the upper substrate (4) in the quiescent state, and is connected to the lower substrate (1) by means of supports (9) of polymeric material. The method of manufacturing such a display device includes steps of forming the movable electrode and enclosed space between the substrates.

Abstract: Diffuse reflectors are manufactured by depositing a reflecting material (5) on a roughened surface of a synthetic resin layer (1), roughened by treatment in a polyhalogenated hydrocarbon plasma containing fluorine and carbon, such as FREON, containing plasma or by means of UV radiation. The layer (5) of reflecting material may also be deposited on the resin layer (11) at an elevated temperature.

Abstract: A passive display device is set forth having two substrates (1, 4) which are provided with fixed electrodes and a movable electrode (10) located between the substrates. The movable electrode lies against the upper substrate (4) in the quiescent state, and is connected to the lower substrate (1) by means of supports (9) of polymeric material. A method of manufacturing such a display device is also set forth.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present invention by diffusing zinc or cadmium from a surface of the substrate-adjoining region to the substrate, and abruptly limiting or retarding the diffusion of the zinc or cadmium into the substrate near a junction between the substrate and the region. This is accomplished in accordance with the present invention by selecting the net donor concentration in the substrate near the junction to be higher than the concentration of zinc or cadmium at the surface of the substrate-adjoining region.