Abstract: The present invention relates to a process for producing a polyurethane, comprising the reaction of a polyol composition (PZ) comprising a polyol (P1) with a polyisocyanate composition (PIZ-1) comprising a polyisocyanate (I1) to obtain a hydroxyl-terminated prepolymer (PP1) and the reaction of the prepolymer (PP1) obtained with a polyisocyanate composition (PIZ-2) comprising a polyisocyanate (I2) and at least one chain extender (K1) to obtain a polyurethane (PU1), wherein the molar ratio of the OH groups in the components of the polyol composition (PZ) to the isocyanate groups in the components of the polyisocyanate composition (PIZ-1) in the reaction in step (i) is in the range from 1.3:1 to 10:1. The present invention further relates to polyurethanes obtainable or obtained by such a process, and to the use of the polyurethanes for production of shaped bodies, adhesives, coatings, hoses, films, nonwoven articles or fibers.

Abstract: A method for producing a shaped body, containing: producing the shaped body from a composition by a powder-based layer construction process, wherein the composition contains a thermoplastic polyurethane, obtained by reacting a polyisocyanate composition and a polyol composition, the thermoplastic polyurethane is solid at least in a temperature region below 50° C. and has end groups selected from the group consisting of first end groups and second end groups, wherein the first end groups are optionally eliminated at a first temperature, and the second end groups are optionally eliminated at a second temperature, to form reactive groups on the thermoplastic polyurethane that optionally enter into a reaction with functional groups of the thermoplastic polyurethane or functional groups of a further component of the composition, and wherein the first temperature and the second temperature are each greater than or equal to 60° C.

Abstract: A computer-implemented method for managing links to resources in a content management system utilizes a link analysis function, the link analysis function being adapted for receiving a link to a target resource; determining a content model of the target resource based at least on content of the target resource; and storing the content model. The method comprises generating a first target model of a first target resource by executing the link analysis function with a first link comprised by the content management system; monitoring the first target resource by generating a temporary first target model of the first target resource by repeating the execution of the link analysis function with the first link; and in response to detecting a difference between the first target model and the temporary first target model, triggering an automatic response action, which comprises storing a change record comprising information indicative of the detected difference.

Abstract: An optical arrangement, for example a lithography system, includes: a first component, in particular a carrying frame; a second component, in particular a mirror, which is movable in relation to the first component; and at least one stop with at least one stop face for limiting the movement of the second component in relation to the first component. The optical arrangement, preferably the stop, can have a fixing device for fixing the second component. The fixing device can have a fixing element that is movable in relation to the stop face of the stop. Further aspects of the device likewise relate to an optical arrangement with a fixing device or with a transport lock.

Abstract: A catadioptric projection lens images a pattern of a mask in an effective object field of the projection lens into an effective image field of the projection lens with electromagnetic radiation with an operating wavelength ?<260 nm. The projection lens includes a multiplicity of lens elements and a multiplicity of mirrors including at least one concave mirror. The lens elements and mirrors define a projection beam path that extends from the object plane to the image plane and contains at least one pupil plane. The mirrors include a first mirror having a first mirror surface in the projection beam path between the object and pupil planes in the optical vicinity of a first field plane optically conjugate to the object plane. The mirrors also include a second mirror having a second mirror surface in the projection beam path between the pupil and image planes in the optical vicinity of a second field plane that is optically conjugate to the first field plane.

Abstract: A computer-implemented method for performing a cloud computing resource operation in a cloud computing environment is herein provided. The method comprises receiving a request to create a resource from the cloud computing environment using a user interface and intercepting the request of the creation of the resource. The method further comprises determining whether an IT management process needs to be triggered based on a policy rule. In case of a positive outcome of the determination, the method comprises requesting a reserved resource identifier from the cloud computing environment relating to the request, creating a temporary representation identifier of the cloud computing resource, triggering the IT management process, receiving a process identifier from the cloud computing environment for the requested resource, creating the requested resource in the cloud computing environment, and on completion of the creation process, removing the temporary representation identifier.

Abstract: A computer-implemented method for performing a cloud computing resource operation in a cloud computing environment is herein provided. The method comprises receiving a request to create a resource from the cloud computing environment using a user interface and intercepting the request of the creation of the resource. The method further comprises determining whether an IT management process needs to be triggered based on a policy rule. In case of a positive outcome of the determination, the method comprises requesting a reserved resource identifier from the cloud computing environment relating to the request, creating a temporary representation identifier of the cloud computing resource, triggering the IT management process, receiving a process identifier from the cloud computing environment for the requested resource, creating the requested resource in the cloud computing environment, and on completion of the creation process, removing the temporary representation identifier.

Abstract: A computer-implemented method for performing a cloud computing resource operation in a cloud computing environment is herein provided. The method comprises receiving a request to create a resource from the cloud computing environment using a user interface and intercepting the request of the creation of the resource. The method further comprises determining whether an IT management process needs to be triggered based on a policy rule. In case of a positive outcome of the determination, the method comprises requesting a reserved resource identifier from the cloud computing environment relating to the request, creating a temporary representation identifier of the cloud computing resource, triggering the IT management process, receiving a process identifier from the cloud computing environment for the requested resource, creating the requested resource in the cloud computing environment, and on completion of the creation process, removing the temporary representation identifier.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+iß1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+iß2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ß1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ß2 of the second layer material.

Abstract: The present invention relates to the use of a composition for stabilizing a geological formation in oil fields, gas fields, water pumping fields, mining or tunnel constructions. The composition has a hardening temperature in the range from about 40° C. to about 120° C. and can therefore be used to stabilize a geological formation in oil fields, gas fields, water pumping fields as well as in mining or tunnel constructions.

Abstract: An optical assembly, in particular for a lithography system for imaging lithographic micro- or nanostructures, includes at least two optical elements arranged successively in a beam path of the optical assembly, an acquisition device designed to acquire radiation signals from marking elements on or at the at least two optical elements, and a control device coupled to the acquisition device and which is designed to determine the plurality of properties of the optically active surface of the at least two optical elements as a function of the information contained in the radiation signals originating from the marking elements. The disclosure also relates to a method for operating the optical assembly.

Abstract: A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1??1)+i?1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1??2)+i?2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation ?1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ?1 of the first layer material and the deviation ?2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ?2 of the second layer material.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: A mirror for a microlithographic projection exposure apparatus and a method for processing a mirror. The mirror includes an optically effective surface, a mirror substrate and a multiple layer system configured to reflect electromagnetic radiation with an operational wavelength of the projection exposure apparatus which is incident on the optically effective surface. The multiple layer system has a plurality of reflection layer stacks (16a, 16b, 16c, 26a, 26b), between each of which a respective separation layer (15a, 15b, 15c, 25a, 25b) is arranged. This separation layer is produced from a material which has a melting temperature that is at least 80° C. but less than 300° C.

Abstract: A projection objective of a microlithographic projection apparatus has a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error.

Abstract: An optical assembly, in particular for a lithography system for imaging lithographic micro- or nanostructures, includes at least two optical elements arranged successively in a beam path of the optical assembly, an acquisition device designed to acquire radiation signals from marking elements on or at the at least two optical elements, and a control device coupled to the acquisition device and which is designed to determine the plurality of properties of the optically active surface of the at least two optical elements as a function of the information contained in the radiation signals originating from the marking elements. The disclosure also relates to a method for operating the optical assembly.

Abstract: A projection objective of a microlithographic projection apparatus comprises a wavefront correction device (42) comprising a mirror substrate (44; 44a, 44b) that has two opposite optical surfaces (46, 48), through which projection light passes, and a circumferential rim surface (50) extending between the two optical surfaces (46, 48). A first and a second optical system (OS1, OS2) are configured to direct first and second heating light (HL1, HL2) to different portions of the rim surface (50) such that at least a portion of the first and second heating light enters the mirror substrate (44; 44a, 44b). A temperature distribution caused by a partial absorption of the heating light (HL1, HL2) results in a refractive index distribution inside the mirror substrate (44; 44a, 44b) that corrects a wavefront error.

Abstract: A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.