Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first substrate and through vias formed through the first substrate. The package further includes redistribution layers formed over the first substrate and connected to the through vias and a first pillar layer formed over the redistribution layers. The package further includes a first barrier layer formed over the first pillar layer and a first cap layer formed over the first barrier layer. The package further includes an underfill layer formed over the redistribution layers and surrounding the first pillar layer, the first barrier layer, and the first cap layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first sidewall surface of the first pillar layer and a second sidewall surface of the first cap layer.

Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: A lead frame includes: a die pad having a die disposing area; a plurality of lead pads located around the die pad; an outer frame, located at a periphery of the die pad and the lead pads; and at least two tie bars, respectively connected between the outer frame and two opposite sides of the die pad. At least one of the die pad and the tie bars includes a thermal deformation mitigation structure.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: A heat dissipation structure, includes: a lead frame, including a high temperature pad and a low temperature pad, the high temperature pad and the low temperature pad being two portions in the lead frame which are separated from each other, wherein a high heat generation component is disposed on the high temperature pad; and a high thermal conduction element, including two sides which are respectively directly connected with the high temperature pad and the low temperature pad, to dissipate the heat energy from the high heat generation component to the low temperature pad.

Abstract: A lead frame includes: at least one ductile structure, including a bond area, a die paddle, or a lead finger; and at least one sacrificial structure, connected between a corresponding ductile structure and a corresponding near portion in the lead frame, wherein the near portion is a portion of the lead frame close to the ductile structure.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A chip package unit includes: a base material; at least one chip, disposed on the base material; a package material, enclosing the base material and the chip; and at least one heat dissipation paste curing layer, formed by curing the heat dissipation paste, on a top side of the package material or a back side of the chip in a printed pattern.

Abstract: The present invention provides a chip packaging method, which includes: providing a base material, which includes plural finger contacts; disposing plural chips on the base material by flip chip mounting technology, and disposing plural vertical heat conducting elements surrounding each of the chips to connect the finger contacts on the base material; providing a packaging material to encapsulate the base material, the chips, and the vertical heat conducting elements; adhering a metal film on the packaging material via an adhesive layer, to form a package structure; and cutting the package structure into plural chip package units, wherein each of the chip package units includes one of the chips, a portion of the base material, a portion of the metal film, and a portion of the vertical heat conducting elements surrounding the chip.

Abstract: A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.

Abstract: A chip packaging structure includes: at least one semiconductor chip, having a signal processing function; a base material, wherein the semiconductor chip is disposed on the base material; at least one thermal conduction plate, disposed on the base material; and a package material, encapsulating the base material, the thermal conduction plate, and the semiconductor chip. The thermal conduction plate forms at least one thermal conduction channel in the package material.

Abstract: A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

Abstract: The present invention provides a chip packaging method, which includes: providing a base material, which includes plural finger contacts; disposing plural chips on the base material by flip chip mounting technology, and disposing plural vertical heat conducting elements surrounding each of the chips to connect the finger contacts on the base material; providing a packaging material to encapsulate the base material, the chips, and the vertical heat conducting elements; adhering a metal film on the packaging material via an adhesive layer, to form a package structure; and cutting the package structure into plural chip package units, wherein each of the chip package units includes one of the chips, a portion of the base material, a portion of the metal film, and a portion of the vertical heat conducting elements surrounding the chip.

Abstract: A chip packaging method includes: providing plural chip units; providing a base material, and placing the chip units on the base material; providing an adhesive layer to adhere a metal foil to the chip unit, wherein the metal foil is a part of the base material or additional to the base material; and cutting the chip units on the base material to form plural separated chip package units, wherein each of the chip package units includes a cut metal foil part.

Abstract: A method for forming a package structure includes forming an under bump metallization (UBM) layer over a metal pad and forming a photoresist layer over the UBM layer. The method further includes patterning the photoresist layer to form an opening in the photoresist layer. The method also includes forming a first bump structure over the first portion of the UBM layer. The first bump structure includes a first barrier layer over a first pillar layer. The method includes placing a second bump structure over the first bump structure. The second bump structure includes a second barrier layer over a second pillar layer. The method further includes reflowing the first bump structure and the second bump structure to form a solder joint between a first inter intermetallic compound (IMC) and a second IMC.

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 ?m to about 3 ?m. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package component including a first bump. The package structure also includes an intermetallic compound (IMC) on the first bump. The package structure further includes an integrated circuit die including a second bump on the IMC. The integrated circuit die and the package component are bonded together through the first bump and the second bump. The IMC extends from the first bump to the second bump to provide good physical and electrical connections between the first bump and the second bump.

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package component including a first bump. The package structure also includes an intermetallic compound (IMC) on the first bump. The package structure further includes an integrated circuit die including a second bump on the IMC. The integrated circuit die and the package component are bonded together through the first bump and the second bump. The IMC extends from the first bump to the second bump to provide good physical and electrical connections between the first bump and the second bump.