Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: A method of fabricating photodiode includes: a substrate comprising a well is provided, next, a first doping region is formed in the well, following that a conductive layer is formed on the surface of the first doping region by an epitaxial growth process, meanwhile, the conductive layer is in-situ doped to form a second doping region in the conductive layer. The method for fabricating the photodiode in the present invention can prevent the lattice structure from being damaged during the high dozes implantation process. Therefore, the dark current can be reduced and the sensitivity of the photodiode will be increased.