Patents by Inventor Heng-chuan Kan

Heng-chuan Kan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130147786
    Abstract: A method and apparatus for executing high performance computation to solve PDEs and for outputting three-dimensional interactive images in collaboration with a GPU is disclosed. The method includes: (A) executing a coordinate transformation to a three-dimensional image by the CPU, setting a boundary condition required by a simulation according to a coordinate transformation result, and inputting the boundary condition to the GPU; (B) executing a numerical simulation of the PDEs and the boundary condition in the step (A); (C) processing and rendering each drawn element by the GPU according to a numerical simulation result to draw a visual image featured with physical quantity variation and overlapping the visual image on the three-dimensional image to form the three-dimensional interactive images.
    Type: Application
    Filed: December 8, 2011
    Publication date: June 13, 2013
    Inventors: Mattew Ross SMITH, Heng-Chuan KAN
  • Publication number: 20130126824
    Abstract: Disclosed are a semiconductor nanowire solid state optical device and a control method thereof. The device comprises a nanowire, a first electrode, a second electrode, an electrical circuit and a mechanical micro device. The nanowire has a first end and a second end. The first electrode is coupled to the first end. The second electrode is coupled to the second end. The electrical circuit is coupled to the first electrode and the second electrode. The mechanical micro device is conjuncted with the nanowire for applying an external force to the nanowire to form highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) in the nanowire. The HOMO and LUMO are employed as an n-type semiconductor and a p-type semiconductor, respectively. The nanowire is a semiconductor when an external force is applied thereto.
    Type: Application
    Filed: June 19, 2012
    Publication date: May 23, 2013
    Applicant: National Applied Research Laboratories
    Inventors: YU-CHING SHIH, Jiunn-horng Lee, Chia-chin Chen, Chi-feng Lin, Yu-bin Fang, Ming-hsiao Lee, Heng-chuan Kan