Patents by Inventor Heng-Hsin Liu

Heng-Hsin Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11906902
    Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yu Chen, Shang-Chieh Chien, Sheng-Kang Yu, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240045323
    Abstract: A pellicle assembly is provided for an associated reticle of an extreme ultraviolet (EUV) scanner. The pellicle assembly includes: a pellicle membrane; and a frame configured to mount the pellicle membrane to the associated reticle. Suitably, the pellicle membrane includes: a nanotube material layer; a first protective layer; a second protective layer; an infrared (IR) active layer arranged between the first protective layer and the second protective layer, the IR active layer filtering out IR wavelengths of light passing therethrough; and a deep ultraviolet (DUV) active layer arranged between the first protective layer and the second protective layer, the DUV active layer filtering out DUV wavelengths of light passing therethrough.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Yen-Hao Liu, Shao-Hua Wang, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240019789
    Abstract: A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality.
    Type: Application
    Filed: August 9, 2023
    Publication date: January 18, 2024
    Inventors: Kai-Chieh CHANG, Kai-Fa HO, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20240006202
    Abstract: A load-lock chamber with reduced particle contamination is disclosed. At least one movable particle shield is placed between the gate valve and a wafer location. Particles which can be generated due to contact between the gate valve door and its seat are blocked or inhibited by the particle shield from landing in the wafer location, reducing particle contamination. Methods for operating the load-lock chamber are also disclosed.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Zheng-Hao Zhang, Hsin Yi Tseng, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20240004304
    Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
    Type: Application
    Filed: June 30, 2022
    Publication date: January 4, 2024
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Patent number: 11852978
    Abstract: The present disclosure provides a method for an extreme ultraviolet (EUV) lithography system that includes a radiation source having a laser device configured with a mechanism to generate an EUV radiation. The method includes collecting a laser beam profile of a laser beam from the laser device in a 3-dimensional (3D) mode; collecting an EUV energy distribution of the EUV radiation generated by the laser beam in the 3D mode; performing an analysis to the laser beam profile and the EUV energy distribution, resulting in an analysis data; and adjusting the radiation source according to the analysis data to enhance the EUV radiation.
    Type: Grant
    Filed: June 7, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tai-Yu Chen, Tzu-Jung Pan, Kuan-Hung Chen, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230400787
    Abstract: An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.
    Type: Application
    Filed: June 15, 2023
    Publication date: December 14, 2023
    Inventors: Chih-Ping YEN, Yen-Shuo SU, Jui-Pin WU, Chun-Lin CHANG, Han-Lung CHANG, Heng-Hsin LIU
  • Publication number: 20230400763
    Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
    Type: Application
    Filed: August 8, 2023
    Publication date: December 14, 2023
    Inventors: Cheng Hung TSAI, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20230400784
    Abstract: A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.
    Type: Application
    Filed: July 28, 2023
    Publication date: December 14, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua WANG, Chueh-Chi KUO, Kuei-Lin HO, Zong-You YANG, Cheng-Wei SUN, Wei-Yuan CHEN, Cheng-Chieh CHEN, Heng-Hsin LIU, Li-Jui CHEN
  • Patent number: 11841625
    Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
    Type: Grant
    Filed: December 10, 2021
    Date of Patent: December 12, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Han Lin, Chieh Hsieh, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
  • Publication number: 20230393489
    Abstract: A method includes transferring an inner pod of a carrier out from an outer pod of the carrier into a lithography exposure apparatus, the inner pod containing a reticle including a reflective multilayer and a pellicle underlying the reflective multilayer; detecting a condition of the pellicle using a metrology device positioned on a base plate of the inner pod during transferring the inner pod in the lithography exposure apparatus; determining whether the condition of the pellicle is acceptable; issuing a warning when the condition of the pellicle is not acceptable.
    Type: Application
    Filed: June 1, 2022
    Publication date: December 7, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Hao LIU, Shao-Hua WANG, Zheng-Hao ZHANG, Fan-Chi LIN, Chueh-Chi KUO, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230384688
    Abstract: Some implementations described herein provide an exposure tool and associated methods of operation in which a scanner control system generates a scanner route for an exposure recipe such that the distance traveled by a substrate stage of the exposure tool along the scanner route is reduced and/or optimized for non-exposure fields on a semiconductor substrate. In this way, the scanner control system increases the productivity of the exposure tool, reduces processing times of the exposure tool, and increases yield in a semiconductor fabrication facility in which the exposure tool is included.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Kai-Chieh CHANG, Kai-Fa HO, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230386884
    Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Shuang-Shiuan DENG, Fan-Chi LIN, Chueh-Chi KUO, Li-Jui CHEN, Heng-Hsin LIU
  • Patent number: 11830754
    Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.
    Type: Grant
    Filed: September 16, 2021
    Date of Patent: November 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Shiuan Deng, Fan-Chi Lin, Chueh-Chi Kuo, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230375950
    Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 23, 2023
    Inventors: Chun-Han LIN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20230375947
    Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Shao-Hua WANG, Kueilin HO, Cheng Wei SUN, Zong-You YANG, Chih-Chun CHIANG, Yi-Fam SHIU, Chueh-Chi KUO, Heng-Hsin LIU, Li-Jui CHEN
  • Publication number: 20230375940
    Abstract: A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.
    Type: Application
    Filed: May 18, 2022
    Publication date: November 23, 2023
    Inventors: Shang-Chieh Chien, Hung-Wen Cho, Wei-Shin Cheng, Ming-Hsun Tsai, Jyun-Yan Chuang, Li-Jui Chen, Heng-Hsin Liu
  • Publication number: 20230375944
    Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 23, 2023
    Inventors: Shang-Chieh CHIEN, Tzu-Jung PAN, Wei-Shin CHENG, Cheng Hung TSAI, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230375949
    Abstract: A method includes: removing debris on a collector of a lithography equipment by changing physical structure of the debris with a cleaner, the cleaner being at a temperature less than about 13 degrees Celsius; forming a cleaned collector by exhausting the removable debris from the collector; and forming openings in a mask layer on a substrate by removing regions of the mask layer exposed to radiation from the cleaned collector.
    Type: Application
    Filed: May 23, 2022
    Publication date: November 23, 2023
    Inventors: Cho-Ying LIN, Tai-Yu CHEN, Chieh HSIEH, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU
  • Publication number: 20230375938
    Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 23, 2023
    Inventors: Cheng-Hao LAI, Ming-Hsun TSAI, Hsin-Feng CHEN, Wei-Shin CHENG, Yu-Kuang SUN, Cheng-Hsuan WU, Yu-Fa LO, Shih-Yu TU, Jou-Hsuan LU, Shang-Chieh CHIEN, Li-Jui CHEN, Heng-Hsin LIU