Abstract: A test cartridge for insertion into an analysis instrument having an actuation mechanism, the test cartridge having one or more sensors for measuring an aspect of the actuation mechanism.

Abstract: Some implementations relate to generating a training and/or evaluation dataset with LLM prompts (e.g., derived from user queries) based on a prompt complexity. An input prompt, for example derived from a user query, is received. The input prompt is decomposed into a prompt tree comprising a plurality of nodes. The plurality of nodes comprise: a plurality of leaf nodes corresponding to simple sub-prompts of the input query; a plurality of branch nodes of sub-prompts each corresponding to multiple simple sub-prompts; and a root node corresponding to the input prompt. A prompt complexity is determined based on a path length of the prompt tree. The prompt complexity is compared to a threshold complexity. If the prompt complexity is above the threshold complexity, the input prompt is included in a set of training prompts and/or a set of evaluation prompts.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: Implementations relate to a method implemented by one or more processors, the method including: receiving natural language (NL) based input associated with a client device; generating, using a large language model (LLM) and based on processing the NL based input, LLM output; determining, based on the LLM output, a sequence of LLM responses, the sequence of LLM responses including at least one intermediate LLM response and a final LLM response. In some implementations, the method may further include causing the final LLM response to be rendered at the client device. In additional or alternative implementations, the method may further include storing, as an instance of training data for fine-tuning the LLM or an additional LLM, the NL based input along with the final LLM response.

Abstract: Actuation systems and methods are disclosed. An apparatus includes a housing, a printed circuit board, and a plurality of shape memory alloy actuators. The printed circuit board is coupled to the housing. Each shape memory alloy actuator has a pair of wire mounts, an actuator rod, a shape memory alloy wire, and a latch assembly. The pair of wire mounts are coupled to opposing sides of the printed circuit board and the actuator rod has a wire guide. The shape memory alloy wire is coupled to the wire mounts and positioned around the wire guide. The latch assembly is coupled to the printed circuit board. Applying a voltage to the shape memory alloy wire retracts the shape memory alloy wire and causes the corresponding actuator rod to move between a first position and a second position. The latch assembly is to hold the actuator rods in the second position.

Abstract: A test cartridge for insertion into an analysis instrument having an actuation mechanism, the test cartridge having one or more sensors for measuring an aspect of the actuation mechanism.

Abstract: Liquid reservoirs, cartridge assemblies and related systems and methods are disclosed. An example implementation includes an apparatus that includes a body, a cover, and a lid assembly. The body includes a top surface and a storage chamber having an opening at the top surface. The cover covers or is positioned within the opening of the storage chamber. The lid assembly is coupled to the top surface and covers the opening of the storage chamber. The top surface and the first portion define a plenum. The cover is at least one of piercable, breakable, or movable to allow the storage chamber to be fluidly coupled to the plenum without venting the plenum to atmosphere.

Abstract: Systems and methods for controlling management operations and shared memory space are disclosed. A cloud cache management controller may receive multiple sets of service attributes. Each set of the multiple sets of service attributes may be related to a cloud cache service instance. The cloud cache management controller may receive a first cloud cache management request. The cloud cache management request may comprise a cloud cache management operation. The cloud cache management controller may retrieve a set of service attributes from the multiple sets of service attributes based on an evaluation of the cloud cache management operation. The cloud cache management controller may send the first cloud cache management request to a corresponding CCSI based on a priority value for the first cloud cache management request calculated based on the retrieved set of service attributes.

Abstract: Systems and methods for cross-region active-active data replication are described. A system includes a cross-region replication service (CRS), a cross-region synchronization service (CSS), and a conflict-free replication data type (CRDT) module executed by a cache service instance.

Abstract: A test cartridge for insertion into an analysis instrument having an actuation mechanism, the test cartridge having one or more sensors for measuring an aspect of the actuation mechanism.

Abstract: Systems and methods for cross-region active-active data replication are described. A system includes a cross-region replication service (CRS), a cross-region synchronization service (CSS), and a conflict-free replication data type (CRDT) module executed by a cache service instance.

Abstract: Provided is an enhancement mode HEMT device including a substrate, a channel layer, a barrier layer, a P-type semiconductor layer, a carrier providing layer, a gate electrode, a source electrode and a drain electrode. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The P-type semiconductor layer is disposed on the barrier layer. The carrier providing layer is disposed on the sidewall of the P-type semiconductor layer and extends laterally away from the P-type semiconductor layer. The gate electrode is disposed on the P-type semiconductor layer. The source electrode and the drain electrode are disposed on the carrier providing layer and at two sides of the gate electrode. A method of forming an enhancement mode HEMT device is further provided.

Abstract: Detection apparatus includes a microfluorometer having an objective, an excitation radiation source, and a detector. The detection apparatus also includes a fluidic system for delivering reagents from a reagent cartridge to a flow cell. The fluidic system includes a manifold body having a plurality of fluidic channels configured for fluid communication between the reagent cartridge and the flow cell. The fluidic system also includes a plurality of reagent sippers. The fluidic system also includes a valve configured to mediate fluid between reagent reservoirs and the flow cell. The detection apparatus also includes a flow cell latch clamp module having a clamp cover for holding the flow cell. The objective is configured to direct excitation radiation from the radiation source to the flow cell and to direct emission from the flow cell to the detector. The microfluorometer is movable to acquire wide-field images of different areas of the flow cell.

Abstract: Systems and methods for controlling management operations and shared memory space are disclosed. A cloud cache management controller may receive multiple sets of service attributes. Each set of the multiple sets of service attributes may be related to a cloud cache service instance. The cloud cache management controller may receive a first cloud cache management request. The cloud cache management request may comprise a cloud cache management operation. The cloud cache management controller may retrieve a set of service attributes from the multiple sets of service attributes based on an evaluation of the cloud cache management operation. The cloud cache management controller may send the first cloud cache management request to a corresponding CCSI based on a priority value for the first cloud cache management request calculated based on the retrieved set of service attributes.

Abstract: Provided is a nitride semiconductor device including a substrate, a nucleation layer, a buffer layer, a channel layer, a first electrode, and a second electrode. The substrate has a first surface and a second surface opposite to the first surface. The nucleation layer, the buffer layer, the channel layer, and the barrier layer are sequentially disposed on the first surface of the substrate. The first electrode layer and the second electrode layer are disposed on the barrier layer. A first void penetrates through the substrate, the nucleation layer, the buffer layer, the channel layer, and the barrier layer and exposes a portion of the first electrode.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first stacked structure, a second stacked structure, an isolation layer and a gate. The first stacked structure is disposed on a substrate, and includes a first GaN channel layer disposed on the substrate and having an N crystal phase and a first barrier layer disposed on the first GaN channel layer. The second stacked structure is disposed on the substrate, and includes a second GaN channel layer disposed on the substrate and having a Ga crystal phase and a second barrier layer disposed on the second GaN channel layer. The isolation layer is disposed between the first stacked structure and the second stacked structure. The gate is disposed on the first stacked structure, the isolation layer and the second stacked structure.

Abstract: The present disclosure relates to minimizing the execution time of compute workloads in a distributed computing system. An example method generally includes receiving, from each of a plurality of server clusters, an estimated completion time and cost information predicted to be consumed in processing the compute workload. A workload manager compares the received estimates to a completion time and threshold cost criteria. Upon determining that the estimated completion time and cost information from any of the plurality of server clusters does not satisfy the completion time and threshold cost criteria, the workload manager partitions the compute workload into a plurality of segments, requests estimated completion time and cost information from the plurality of server clusters for each of the plurality of segments, and selects a cluster to process each segment of the compute workload based on the estimated completion time and cost reported for each segment.

Abstract: A nitride semiconductor device is provided, including a substrate having a first surface and a second surface opposite to each other; a nucleation layer disposed on the first surface of the substrate; a doped nitride semiconductor layer disposed on the nucleation layer; a doped first buffer layer disposed on the doped nitride semiconductor layer; a channel layer disposed on the doped first buffer layer; a barrier layer disposed on the channel layer; a first electrode disposed on the barrier layer; a second electrode electrically connected to the doped nitride semiconductor layer; and a doped region disposed at least in a portion of the doped nitride semiconductor layer, wherein the doped region is extended from below the first electrode to be partially overlapped with the second electrode.

Abstract: Provided is an enhancement mode HEMT device including a substrate, a channel layer, a barrier layer, a P-type semiconductor layer, a carrier providing layer, a gate electrode, a source electrode and a drain electrode. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The P-type semiconductor layer is disposed on the barrier layer. The carrier providing layer is disposed on the sidewall of the P-type semiconductor layer and extends laterally away from the P-type semiconductor layer. The gate electrode is disposed on the P-type semiconductor layer. The source electrode and the drain electrode are disposed on the carrier providing layer and at two sides of the gate electrode. A method of forming an enhancement mode HEMT device is further provided.