Abstract: A pixel structure including a first electrode layer, a second electrode layer and a liquid crystal layer is provided. The first electrode layer includes a plurality of first electrodes and a plurality of second electrodes, wherein the first electrodes are used for receiving a first driving voltage, and the second electrodes are used for receiving a second driving voltage. The second electrode layer includes a plurality of third electrodes and a plurality of fourth electrodes, wherein the third electrodes are used for receiving a third driving voltage and the fourth electrodes are used for receiving a fourth driving voltage. The liquid crystal layer is disposed between the first electrode layer and the second electrode layer. The first electrodes and the second electrodes are alternately disposed along a first direction parallel to the liquid crystal layer, and the third electrodes and the fourth electrodes are alternately disposed along the first direction.

Abstract: A pixel structure including a first electrode layer, a second electrode layer and a liquid crystal layer is provided. The first electrode layer includes a plurality of first electrodes and a plurality of second electrodes, wherein the first electrodes are used for receiving a first driving voltage, and the second electrodes are used for receiving a second driving voltage. The second electrode layer includes a plurality of third electrodes and a plurality of fourth electrodes, wherein the third electrodes are used for receiving a third driving voltage and the fourth electrodes are used for receiving a fourth driving voltage. The liquid crystal layer is disposed between the first electrode layer and the second electrode layer. The first electrodes and the second electrodes are alternately disposed along a first direction parallel to the liquid crystal layer, and the third electrodes and the fourth electrodes are alternately disposed along the first direction.

Abstract: A gas-supply system includes a gas container filled with gas, a gas flow controller coupled to the gas container, and an operation device electrically connected to the gas flow controller. The gas-supply system further includes a buffer tank coupled to the gas flow controller and configured to receive the gas from the gas container via the gas flow controller. Furthermore, a pressure transducer disposed on the buffer tank and configured to generate a pressure signal to the operation device according to the pressure of the gas in the buffer tank. The operation device is configured to generate a control signal to the gas flow controller according the pressure signal, and the gas flow controller is configured to adjust the flow rate of the gas according to the control signal to keep the pressure of the gas in the buffer tank in a predetermined pressure range.

Abstract: A vertical furnace equipped with self-positioning gas injectors for processing wafers and a method for mounting self-positioning gas injectors in the furnace are disclosed. The vertical furnace is constructed by a cylindrical-shaped tube fabricated of quartz having a cavity therein for positioning of a wafer boat; a mounting ring positioning inside the cavity and for mounting the gas injectors thereon; and a plurality of gas injectors each formed in a “L” configuration with a stopper formed on a bottom of the horizontal portions of the gas injectors such that each of the stoppers is formed at a different location and fits only one slot opening formed on the mounting ring.

Abstract: A wafer boat for securely holding wafers therein during processing in a vertical furnace and a method for loading dummy wafers into a wafer boat without having to remove/reload for each oxidation process have been disclosed. In the wafer boat, a plurality of cavities are formed by horizontal notches in support posts together with horizontal ridges that are integrally formed with the support posts. A raised portion extending upwardly from a top surface of the horizontal ridge such that any possible outward movements of the dummy wafer, even after repeated loading/unloading operations, from the cavity can be prevented. A suitable height of the raised portion is between about 0.2 mm and about 2 mm, a more preferred range for the height is between about 0.2 mm and about 0.5 mm.

Abstract: An apparatus and a method for evacuating a process chamber by a dry pump and then shutting down the pump without back steam and high pressure safety problems are disclosed. In the apparatus, a conduit is provided for connecting in fluid communication between a process chamber and a dry pump, two gate valves are provided in the conduit with one mounted adjacent to the process chamber and the other adjacent to the dry pump. A pressure relief valve is provided and mounted to bridge over an inlet and an outlet of the second gate valve such that any pressure build-up in the conduit upstream of the second gate valve can be avoided for preventing injury to a machine operator. The back steam problem can be effectively prevented when the dry pump is shut down simultaneously with the closing of the first and the second gate valves. The pressure relief valve may be pre-set to operate automatically when a differential pressure larger than 0.33 psi is detected.