Abstract: The disclosed subject matter relates to resist compositions that include the following components: Component a) a blend of two Novolak polymers having structures (I) and (II); component b) a diazo-naphthoquinone sulfonate (DNQ-PAC) component which is a single material or a mixture of materials having general formula having structure (III) or having general formula (III-1); is a dissolution enhancer component comprising a polyphenolic compound which is a single compound or a mixture of at least two compounds selected from the group consisting of an oligomeric fractionated Novolak, a compounds having general structure (VI) and a compound having general structure (VII), wherein Rde1, Rde2, Rde3, Rde4 and Rde5 are individually selected from a C-1 to C-4 alkyl; component d) a surfactant; and component e) an organic spin casting solvent, and an optional component f) a heterocyclic thiol.

Abstract: The present invention relates to a composition including at least one sulfosalicylic acid having structure (I), or its hydrate, and mixtures thereof and a sulfosalicylic acid having structure (I), or its hydrate, a primary solvent selected from acetone, and methyl ethyl ketone, or a mixture of these solvents, an optionally a secondary solvent which is a glycolic derivative, or a mixture of at least two glycolic derivatives, and an optional surfactant.

Abstract: The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly.

Abstract: The present invention relates to a composition including a sulfonic acid selected from the group consisting of an alkyl-benzenesulfonic acid having structure (I), or its hydrate (wherein n is an integer from 6 to 16), a sulfosalicylic acid having structure (II), or its hydrate, and mixtures thereof and the solvent dipropylene glycol dimethyl ether [CAS registry number 111109-77-4] (III);

Abstract: The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH2—CH2—)n—OH, —OH, —O—C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate.

Abstract: The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH2—CH2—)n, —OH, —OH, and -0-C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group.

Abstract: The present invention relates to a remover composition comprising, tetraalkylammonium hydroxide, a benzylic alcohol, a glycol component comprising at least one glycol compound, and a and an alkyl amine component, wherein said alkyl amine component is selected from the group consisting of a dialkyl amine, a mono-alkyl amine having structure having structure (I), and combinations thereof wherein, in said di-alkyl amine, one of the alkyl groups is a C-1 to C-4 n-alkyl and the other alkyl group is a C-16 to C-20 n-alkyl, and for said mono-alkyl amine m? and m are independently chosen from an integer ranging from 4 to 8. This invention also pertains to the process of using these compositions to remove a patterned photoresist from a substrate.

Abstract: The present invention relates to a novel styrenic polymer and to the novel composition comprised of this polymer and a solvent; wherein the styrenic polymer has a polydispersity from 1 to 1.3 and further wherein each polymer chain of the styrenic polymer is capped with one end group of structure 1), wherein, and L is a linking group selected from the group consisting of a direct valence bond, oxy (—O—), carbonyloxy, (—(C?O)—O—), carbonate (—O—(C?O)—O—); L2 is a C-1 to C-20 substituted or unsubstituted alkylene spacer, an arylene spacer or a direct valence bond, R, is hydrogen, a halide, a C-1 to C-20 alkyl moiety, or a C-1 to C-20 alkyloxy moiety, m is an integer from 1 to 3; and (I) represent the direct valence bond attaching the end group 1) to the end of the polymer chain of the styrenic polymer. In another aspect of this invention it pertains to the use of this composition to create self-assembly process.

Abstract: The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH2—CH2—)n?—OH, —OH, and -0-C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group.

Abstract: The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH2—CH2—)n—OH, —OH, —O—C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate.

Abstract: The present invention relates to a remover composition comprising, tetraalkylammonium hydroxide, a benzylic alcohol, a glycol component comprising at least one glycol compound, and a and an alkyl amine component, wherein said alkyl amine component is selected from the group consisting of a dialkyl amine, a mono-alkyl amine having structure having structure (I), and combinations thereof wherein, in said di-alkyl amine, one of the alkyl groups is a C-1 to C-4 n-alkyl and the other alkyl group is a C-16 to C-20 n-alkyl, and for said mono-alkyl amine m? and m are independently chosen from an integer ranging from 4 to 8. This invention also pertains to the process of using these compositions to remove a patterned photoresist from a substrate.

Abstract: The present invention relates to a novel styrenic polymer and to the novel composition comprised of this polymer and a solvent; wherein the styrenic polymer has a polydispersity from 1 to 1.3 and further wherein each polymer chain of the styrenic polymer is capped with one end group of structure 1), wherein, and L is a linking group selected from the group consisting of a direct valence bond, oxy (—O—), carbonyloxy, (—(C?O)—O—), carbonate (—O—(C?O)—O—); L2 is a C-1 to C-20 substituted or unsubstituted alkylene spacer, an arylene spacer or a direct valence bond, R, is hydrogen, a halide, a C-1 to C-20 alkyl moiety, or a C-1 to C-20 alkyloxy moiety, m is an integer from 1 to 3; and (I) represent the direct valence bond attaching the end group 1) to the end of the polymer chain of the styrenic polymer. In another aspect of this invention it pertains to the use of this composition to create self-assembly process.

Abstract: Disclosed and claimed herein is a template for directing a pattern in a block copolymer film and the process of making the pattern.

Abstract: The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly.

Abstract: The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit m

Abstract: The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit m

Abstract: The present invention relates to novel copolymers containing cross-linkable and graft-able moieties, novel compositions comprised of these novel copolymers and a solvent, and methods for using these novel compositions to form neutral layer films which are both cross-linked and grafted on the substrate which are used in processes for aligning microdomains of block copolymers (BCP) on this neutral layer coated substrate such as self-assembly and directed self-assembly.

Abstract: The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Abstract: The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n=1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Abstract: The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where R1 to R5 are independently chosen from the group consisting of H and C1-C6 alkyl; R6 is chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C1-C8) and fluoroalkyl (C1-C8) and W is a C2-C6 alkylene spacer.