Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.

Abstract: Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.

Abstract: A conductive planarization assembly for use in electrochemical mechanical planarization is provided. A conductive planarization assembly in accordance with an exemplary embodiment of the invention comprises a first insulating member and a second insulating member overlying the first insulating member and having a plurality of first holes. A conductive member is interposed between the first insulating member and the second insulating member and is electrically coupled to an external circuit. The conductive member comprises a plurality of cathode regions that are exposed by the plurality of first holes of the second insulating member.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Abstract: Conductive contacts and methods for fabricating conductive contacts for electrochemical mechanical planarization are provided. A conductive contact in accordance with an exemplary embodiment of the invention includes, but is not limited to, a first conductive surface formed of a flexible material, a conductive element that is disposed remote from the first conductive surface and that is configured for electrical coupling to an external circuit, and an intermediate portion that electrically couples the first conductive surface and the conductive element.

Abstract: A spin bowl includes a base and a sidewall that extends from the base. The base has an upper portion for supporting a substrate in a horizontal plane and a lower portion that intersects with the sidewall. The lower portion of the base has a plurality of drain holes formed therein proximate to the sidewall. Each of the plurality of drain holes is configured to trap fluid therein during spinning of the spin bowl to thereby form a fluid seal that prevents air from flowing therethrough. In one embodiment, each of the drain holes is V-shaped. In another embodiment, the fluid seal is formed by the intersection of a straight drain hole with an external fluid catch area. An apparatus and method for spin coating a film over a substrate also are described.

Abstract: In a method for applying a coating material on a substrate, a print head is disposed over a substrate. Drops of a coating material are controllably dispensed from the print head to form a wide area film on the substrate. A system for coating a wafer includes a housing, and a chuck for supporting the wafer and a print head are disposed in the housing. A source of a coating material is coupled to the print head. A digital signal processor provides control signals for controlling process parameters for dispensing drops of the coating material and for controlling the relative position of the print head and the chuck. The relative position of the print head and the chuck (and hence the wafer supported thereon) may be controlled by moving the print head by itself, by moving the chuck by itself, or by moving both the print head and the chuck.

Abstract: The bypass element is connected in parallel with a single battery cell or a group of battery cells of a high-temperature storage battery including a plurality of series-connected electrochemical battery cells and is used both for balancing the charging state of undamaged battery cells and for the irreversible bypassing of destroyed cells which have failed with high impedance. The bypass element includes two series-connected semiconductor components, in particular semiconductor diodes, varistors or NTC resistances in each case having a different current/voltage characteristic or curve. In the event of potentiostatic overcharging of a battery cell, the first semiconductor component goes to low impedance so that the current flow necessary for charging further battery cells is determined only by the leakage current of the second semiconductor component. If a destroyed battery cell fails with high impedance, both semiconductor components break down and irreversibly short-circuit the cell with a low impedance.

Abstract: Method for measuring the free oxygen concentration in gas mixtures, especially combustion gases, with an electrochemical measuring device which comprises an oxygen ion-conducting solid electrolyte and two electrodes to which the supply voltage U.sub.s is fed. The supply voltage U.sub.s is formed from the sum of at least two voltage components U.sub.a and U.sub.v. The first voltage component U.sub.a is kept at a constant predeterminable value which is required for ionizing the free oxygen. The second voltage component U.sub.v is kept variable and its respective value is determined as a function of the magnitude of the probe current I.sub.s flowing between the electrodes.

Abstract: High-temperature battery with at least one electrochemical storage cell which is surrounded by thermal insulation as well as by feed and discharge lines for the cooling air. At least one module which can be inserted into the high-temperature battery, contains the storage cells. The module has a feedline for cooling air and a discharge for the cooling air which are arranged so that the cooling air can be introduced into the module against the force of gravity and discharged from the module with the force of gravity.

Abstract: Circuit for the uniform charging and discharging of electrochemical storage cells of the alkali metal and chalcogen type having a protective element in the circuit. The protective element is a container filled with a chemical compound which easily dissociates and easily recombines. The outer surface of the container forms an anode. An electrically conducting rod which forms a cathode extends into and also out of the container, and is electrically insulated in its mounting.