Patents by Inventor Henning Haffiner

Henning Haffiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicided Semiconductor Structure and Method of Forming the Same
    Publication number: 20100193867
    Abstract: A preferred embodiment includes a method of manufacturing a fuse element that includes forming a polysilicon layer over a semiconductor structure, doping the polysilicon layer with carbon or nitrogen, depositing a metal over the polysilicon layer; and annealing the metal and polysilicon layer to form a silicide in an upper portion of the polysilicon layer.
    Type: Application
    Filed: February 3, 2009
    Publication date: August 5, 2010
    Inventors: Jiang Yan, Henning Haffiner, Frank Huebinger, SunOo Kim, Richard Lindsay, Klaus Schruefer