Patents by Inventor Henning Kraack

Henning Kraack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices with superjunction structures
    Patent number: 10957788
    Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm?3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 ?m. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: March 23, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Daniel Hölzl, Henning Kraack, Gabor Mezoesi, Hans-Joachim Schulze, Waqas Mumtaz Syed
  • Semiconductor Devices with Superjunction Structures
    Publication number: 20200251580
    Abstract: A semiconductor device includes: a semiconductor substrate having a bulk oxygen concentration of at least 6×1017 cm?3; an epitaxial layer on a first side of the semiconductor substrate, the epitaxial layer and the semiconductor substrate having a common interface; a superjunction semiconductor device structure in the epitaxial layer; and an interface region extending from the common interface into the semiconductor substrate to a depth of at least 10 ?m. A mean oxygen concentration of the interface region is lower than the bulk oxygen concentration of the semiconductor substrate.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 6, 2020
    Inventors: Daniel Hölzl, Henning Kraack, Gabor Mezoesi, Hans-Joachim Schulze, Waqas Mumtaz Syed
  • Method for manufacturing semiconductor devices with superjunction structures
    Patent number: 10658497
    Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm?3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: May 19, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Daniel Hölzl, Henning Kraack, Gabor Mezoesi, Hans-Joachim Schulze, Waqas Mumtaz Syed
  • Method for Manufacturing Semiconductor Devices with Superjunction Structures
    Publication number: 20190043971
    Abstract: A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of less than 6×1017 cm?3, forming an epitaxial layer on a first side of the semiconductor substrate, and implanting dopants into the epitaxial layer. An optional thermal anneal is carried out prior to forming the epitaxial layer and/or a thermal treatment is carried out after implanting dopants.
    Type: Application
    Filed: August 3, 2018
    Publication date: February 7, 2019
    Inventors: Daniel Hölzl, Henning Kraack, Gabor Mezoesi, Hans-Joachim Schulze, Waqas Mumtaz Syed