Abstract: The present invention relates to a formulation for preparing an optical metal oxide layer, the formulation comprising polyoxometalates (POMs) complexed to metal oxide nanoparticles (NPs); a method for preparing an optical metal oxide layer using said formulation; and an optical device comprising said optical metal oxide layer.

Abstract: The present invention relates to an electronic switching device, in particular to tunnel junctions, comprising an organic molecular layer for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). Another aspect of the invention relates to a compound of formula I in which the occurring groups have the meanings defined in claim 1, for use in the molecular layer. The invention further relates to the use of said molecular layer and to processes for the production and operation of the electronic switching element and components based thereon.

Abstract: The present invention relates to hydroxyamino phosphinic acid derivatives of formula I in which the occurring groups and parameters have the meanings defined in claim 1, to a method for their preparation and to their use for the fabrication of self-assembled monolayers (SAM), in particular for the fabrication of switchable SAM for electronic devices. The invention further relates to electronic devices comprising said SAM, preferably in the field of organic electronics, in particular for use in memory, sensors, furthermore in organic light-emitting diodes (OLEDs), photovoltaics (OPVs), field-effect transistors (OFETs) and Josephson junctions, very particularly in memristive components such as memristive crossbar-arrays.

Abstract: A formulation for preparing an optical layer that includes a metal oxide includes a material selected from one or more members of the group consisting of metal sulfates, metal phosphates, metal oxy sulfates, metal oxy phosphates, metal oxy chlorides, hydrated metal sulfates, hydrated metal phosphates, hydrated metal oxy sulfates, hydrated metal oxy phosphates and hydrated metal oxy chlorides, and a chemical compound represented by following chemical formula (I) as defined herein.

Abstract: A method for preparing a composite comprising at least the following steps (a) to (c): (a) providing a formulation onto a surface of a substrate by a wet deposition process to obtain a partly or fully dried formulation; (b) applying a post bake to the formulation provided on the surface of the substrate to obtain a 1st composite; and (c) applying a post-treatment to the 1st composite to obtain a final composite or applying a post-treatment to the partly or fully dried formulation obtained in step (a).

Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Abstract: A metal complex, a formulation comprising metal complex and a method for preparing a metal oxide optical layer using said formulation and metal complex. The obtained metal oxide optical layers are particularly suitable for applications in optical devices such as, for example, in augmented reality (AR) and/or virtual reality (VR) devices.

Abstract: The present invention relates to diamondoid compounds of formula I D1-ZD-(A1-Z1)r-B1-(Z2-A2)s-Sp-G ??(I) in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers (SAM), to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Abstract: A polyoxometalate compound with a polyoxometalate cluster includes Group 5 elements. A formulation is provided that includes the polyoxometalate compound, and a method is provided for preparing an optical metal oxide layer using the formulation and polyoxometalate compound. The obtained optical metal oxide layers are particularly suitable for applications in optical devices such as, for example, in augmented reality (AR) and/or virtual reality (VR) devices.

Abstract: The present invention relates to an electronic switching device, in particular to tunnel junctions, comprising an organic molecular layer for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). Another aspect of the invention relates to a compound of formula I in which the occurring groups have the meanings defined in claim 1, for use in the molecular layer. The invention further relates to the use of said molecular layer and to processes for the production and operation of the electronic switching element and components based thereon.

Abstract: The present invention relates to a compounds of formula I R1-(A1-Z1)r—B1—ZL-A2-(Z3-A3)s-G??(I) in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Abstract: The present invention relates to a method for preparing an optical metal oxide layer, to a formulation for preparing an optical metal oxide layer and to an optical device comprising an optical metal oxide layer. The optical metal oxide layers are particularly suitable for optical applications and may be used in optical devices such as, for example, in diffractive gratings for augmented reality (AR) and/or virtual reality (VR) devices.

Abstract: A process is described for production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular, in memory elements of the ReRAM type. Additionally, compounds for production of the molecular layer are disclosed, as well as memory elements containing the molecular layer.

Abstract: An electronic element (10) comprising a plurality of cells (100) arranged in a three dimensional array of cells (100) is provided, wherein the cells (100) are located at crossings between two crossed electrode lines (30, 31). Each cell (100) of the electronic component (100) comprises in this order a first electrode (102), a part (104) of a molecular layer (20) and a second electrode (106), wherein the molecular layer (20) is a self-assembled monolayer of organic molecules having an anchoring group connected to a dipolar unit by means of a conformationally flexible unit. Further aspects of the invention relate to a method and a compound for producing such an electronic element (10) and the use of such an electronic element (10).

Abstract: A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G??(I) in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Abstract: An electronic switching device, in particular tunnel junctions, containing an organic molecular layer for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, related to the field of random access non-volatile memristive memories (RRAM). Another aspect is a compound of formula I for use in a molecular layer. Also, the use of the molecular layer and processes for the production and operation of an electronic switching element and components based thereon.

Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Abstract: The invention relates to a process for the production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular in memory elements of the ReRAM type. The present invention furthermore relates to compounds for the production of the molecular layer and to memory elements comprising the molecular layer.

Abstract: A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.