Abstract: A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G??(I) in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Abstract: An electronic switching device, in particular tunnel junctions, containing an organic molecular layer for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, related to the field of random access non-volatile memristive memories (RRAM). Another aspect is a compound of formula I for use in a molecular layer. Also, the use of the molecular layer and processes for the production and operation of an electronic switching element and components based thereon.

Abstract: The present invention relates to an electronic switching device comprising an organic molecular layer in contact with a metal nitride electrode for use in memory, sensors, field-effect transistors or Josephson junctions. More particularly, the invention is included in the field of random access non-volatile memristive memories (RRAM). The invention thus further relates to an electronic component comprising a crossbar array comprising a multitude of said electronic switching devices.

Abstract: The invention relates to a process for the production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular in memory elements of the ReRAM type. The present invention furthermore relates to compounds for the production of the molecular layer and to memory elements comprising the molecular layer.

Abstract: A two-bit memory device having a layer structure containing in order a bottom layer, a molecular layer containing a chiral compound having at least one polar functional group, and a top layer, which is electrically conductive and ferromagnetic. The chiral compound acts as a spin filter for electrons passing through the molecular layer. The chiral compound is of flexible conformation and has a conformation-flexible molecular dipole moment. An electrical resistance of the layer structure for an electrical current running from the bottom layer to the top layer has at least four distinct states which depend on the magnetization of the top layer and on the orientation of the conformation-flexible dipole moment of the chiral compound. Furthermore, a method for operating the two-bit memory device and an electronic component containing at least one two-bit memory device.

Abstract: The present invention relates to a compounds of formula I R1-(A1-Z1)r—B1—ZL-A2-(Z3-A3)s-G ??(I) in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Abstract: The present invention relates to an organic electroluminescent device comprising a hole-injection layer comprising a metal complex as a main component and a method for producing the organic electroluminescent device.

Abstract: The present invention relates to diamondoid compounds of formula I D1-ZD-(A1-Z1)r-B1-(Z2-A2)s-Sp-G ??(I) in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers (SAM), to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

Abstract: A method produces cross-linked hole-conducting electric layers by converting functionalized p-dopants. The functionalized p-dopants are organic metal complexes containing at least one central atom and organic ligands, wherein the central atom is selected from a metal of the groups 6-15 of the periodic table, and at least one of the organic ligands is selected from the following formulas I-V, in which E independently of one another is oxygen, sulfur, selenium, or N(E1)x, and each Rv has at least one functionalizing group selected from the group RF including —OH, —COOH, —NH2, —NHR?, halogen, C2-C40-alkenyl, -dienyl, -alkinyl, -alkenyloxy, -dienyloxy, -alkinyloxy, acrylic acid, oxetan, oxiran, silane, acrylic acid, anhydride, and cyclobutane or consists of the groups, and G=C(RF)uHvFw where u+v+w=3 and n=1-4.

Abstract: The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I R1-(A1-Z1)r—(B1)n—(Z2-A2)s-Sp-G ??(I) in which the groups occurring have the meanings defined in claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

Abstract: The present invention relates to compositions comprising at least one polymer containing repeat triarylamine units and comprising at least one salt, to processes for production thereof and to the use thereof in electronic devices, especially in organic electroluminescent devices, called OLEDs (OLED=organic light-emitting diodes). The present invention also further relates to organic electroluminescent devices comprising these compositions.

Abstract: The present invention relates to compositions comprising at least one polymer which contains triarylamine repeating units, and at least one metal complex, to methods for the production thereof, and the use thereof in electronic devices, especially in organic electroluminescent devices, so-called OLEDs (OLED=Organic Light Emitting Diode). The present invention also relates to organic electroluminescent devices which contain said compositions.

Abstract: The present invention relates to formulations which comprise at least one organic semiconductor, at least one metal complex and at least one solvent and the use of these formulations in electronic devices, in particular organic electroluminescent devices.

Abstract: The present invention relates to an organic electroluminescent device comprising a hole-injection layer comprising a metal complex as a main component and a method for producing the organic electroluminescent device.

Abstract: A method produces cross-linked hole-conducting electric layers by converting functionalized p-dopants. The functionalized p-dopants are organic metal complexes containing at least one central atom and organic ligands, wherein the central atom is selected from a metal of the groups 6-15 of the periodic table, and at least one of the organic ligands is selected from the following formulas I-V, in which E independently of one another is oxygen, sulfur, selenium, or N(E1)x, and each Rv has at least one functionalizing group selected from the group RF including —OH, —COOH, —NH2, —NHR?, halogen, C2-C40-alkenyl, -dienyl, -alkinyl, -alkenyloxy, -dienyloxy, -alkinyloxy, acrylic acid, oxetan, oxiran, silane, acrylic acid, anhydride, and cyclobutane or consists of the groups, and G=C(RF)uHvFw where u+v+w=3 and n=1-4.

Abstract: The present invention relates to formulations which comprise at least one organic semiconductor, at least one metal complex and at least one solvent and the use of these formulations in electronic devices, in particular organic electroluminescent devices.

Abstract: The present invention relates to compositions comprising at least one polymer containing repeat triarylamine units and comprising at least one salt, to processes for production thereof and to the use thereof in electronic devices, especially in organic electroluminescent devices, called OLEDs (OLED=organic light-emitting diodes). The present invention also further relates to organic electroluminescent devices comprising these compositions.

Abstract: The present invention relates to compositions comprising at least one polymer which contains triarylamine repeating units, and at least one metal complex, to methods for the production thereof, and the use thereof in electronic devices, especially in organic electroluminescent devices, so-called OLEDs (OLED=Organic Light Emitting Diode).