Abstract: A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by ink-jet printing.

Abstract: A method for forming an aligned polymer layer, the method comprising: bringing a solution of the polymer dissolved in a solvent into contact with a substrate; and depositing the layer on the substrate by progressively absorbing molecules of the polymer from solution on to the substrate in the presence of a field capable of inducing alignment in the polymer; and separating the substrate from the solution.

Abstract: An electronic device comprising a layer of a polymer having an electrically conductive or semiconductive main chain, wherein the chains of the polymer have an electrically conductive or semiconductive charge transporting end-group at each end thereof, and the polymer in the layer is organised in a lamellar structure having ordered regions, in which the polymer main chains are aligned with respect to each other, and boundary regions which separate the ordered regions and in which the degree of alignment between adjacent polymer main chains is less than that in the ordered regions.

Abstract: A method for forming an aligned layer of a polymer, the method comprising: depositing a film of the polymer from solution in a solvent onto a substrate; and bringing the polymer into alignment by annealing the film at a temperature below the melting temperature of the polymer in isotropic bulk, and cooling the film.

Abstract: A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.

Abstract: A method for forming an aligned polymer layer, the method comprising: depositing a film of the polymer in a solvent; bringing the polymer into alignment whilst some of the solvent remains present in the film; and solidifying the film by removing the solvent from the film.

Abstract: A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality or regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being electrically separa

Abstract: A method for forming an electronic device on a substrate, the device including a first electrically conductive region, a second electrically conductive region spaced from the first electrically conductive region and a region of an semiconductor material between the first and second electrically conductive regions and in contact with the first electrically conductive region, the method comprising doping an interfacial zone comprising least part of the periphery of the semiconductor material at the interface between the semiconductor material and the first electrically conductive region by means of a dopant contained in the first conductive material and capable of doping the semiconducting material so as to thereby enhance the conductivity of the interfacial zone.

Abstract: A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase.

Abstract: The present invention provides a compound or complex comprising at least two moieties, each moiety being comprised of two or more thiophenes fused directly to each other. Also provided is a method for the production of the compounds of the present invention, which method comprises the coupling of one fused thiophene derivative to another fused thiophene derivative.

Abstract: The new fluorocarbon-functionalized polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T (1) can be straightforwardly prepared in high yield and purified by gradient sublimation. Introduction of perfluorocarbon chains on the thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the fluorine-free analog 2. Evaporated films of 1, for example, behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities on the order of ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.

Abstract: An integrated circuit device comprising: a current drive switching element having an input electrode, an output electrode, a switchable region comprising a semiconductive polymer material electrically coupled between the input electrode and the output electrode, and a control electrode electrically coupled to the switchable region so as to allow the application of a bias to the control electrode to vary the flow of current through the switchable region between the input electrode and the output electrode; and a second circuit element integrated with the switching element, and electrically coupled with the input electrode of the switching element for receiving a drive current from the switching element.

Abstract: The present invention provides a compound or complex comprising at least two moieties, each moiety being comprised of two or more thiophenes fused directly to each other. Also provided is a method for the production of the compounds of the present invention, which method comprises the coupling of one fused thiophene derivative to another fused thiophene derivative.

Abstract: A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor; and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble.

Abstract: A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality or regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being electrically separa

Abstract: A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by ink-jet printing.

Abstract: A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localised region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.

Abstract: The present invention provides a compound or complex comprising at least two moieties, each moiety being comprised of two or more thiophenes fused directly to each other. Also provided is a method for the production of the compounds of the present invention, which method comprises the coupling of one fused thiophene derivative to another fused thiophene derivative.

Abstract: The new fluorocarbon-functionalized polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T (1) can be straightforwardly prepared in high yield and purified by gradient sublimation. Introduction of perfluorocarbon chains on the thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the fluorine-free analog 2. Evaporated films of 1, for example, behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities on the order of ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.