Patents by Inventor Henok Mebrahtu

Henok Mebrahtu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220415908
    Abstract: Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.
    Type: Application
    Filed: July 14, 2021
    Publication date: December 29, 2022
    Inventors: Guangyu Huang, Dipanjan Basu, Meng-Wei Kuo, Randy Koval, Henok Mebrahtu, Minsheng Wang, Jie Li, Fei Wang, Qun Gao, Xingui Zhang, Guanjie Li