Patents by Inventor Henrg Chen

Henrg Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6522063
    Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.
    Type: Grant
    Filed: March 28, 2001
    Date of Patent: February 18, 2003
    Assignee: Epitech Corporation
    Inventors: Shi Ming Chen, Wen Liang Li, Henrg Chen, Hsin Chuan Wang
  • Publication number: 20020158572
    Abstract: A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.
    Type: Application
    Filed: March 28, 2001
    Publication date: October 31, 2002
    Inventors: Shi Ming Chen, Wen Liang Li, Henrg Chen, Hsin Chuan Wang