Abstract: An electron beam nanometer-level metrology tool includes an ambient temperature electron source and a movable stage for mounting a workpiece. The stage is adapted to position the workpiece's surface in a beam interrogation region. Electrostatic focus lenses convert electrons emitted by the electron source into a beam with a focal point that is positioned in the beam interrogation region. The lenses cause the electron beam to traverse a path that is generally orthogonal to the workpiece surface. Along the beam path are positioned upper and lower electrostatic deflection plates which are connected to an adjustable voltage source that applies ganged, opposite-sense d/c potentials thereto. Those potentials enable a scanning of the beam across the beam interrogation region while the beam remains substantially orthogonal to the workpiece surface, thereby enabling more accurate measurements of surface features.

Abstract: An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes".

Abstract: An integrated tip strain sensor is combination with a single axis atomic force microscope (AFM) for determining the profile of a surface in three dimensions. A cantilever beam carries an integrated tip stem on which is deposited a piezoelectric film strain sensor. A high-resolution direct electron beam (e-beam) deposition process is used to grow a sharp tip onto the silicon (Si) cantilever structure. The direct e-beam deposition process permits the controllable fabrication of high-aspect ratio, nanometer-scale tip structures. A piezoelectric jacket with four superimposed elements is deposited on the tip stem. The piezoelectric sensors function in a plane perpendicular to that of a probe in the AFM; that is, any tip contact with the linewidth surface will cause tip deflection with a corresponding proportional electrical signal output. This tip strain sensor, coupled to a standard single axis AFM tip, allows for three-dimensional metrology with a much simpler approach while avoiding catastrophic tip "crashes".

Abstract: An integrated scanning force microprobe and optical microscopy metrology system is disclosed, that measures the depth and width of a trench in a sample. The probe remains fixed while the sample is moved relative to the probe. The system detects the proximity of the probe to a sample and to the side walls of the trench, providing output signals indicating the vertical and transverse relationship of the probe to the sample. The system adjusts the relative position of the sample vertically and transversely as a function of the output signals. Variety of probes can be used with this system to detect the depth and width of the trench. The probe should have at least one protuberance extending down to sense the bottom of the trench. The tip of the probe can have Lateral protuberances that can extend in opposite directions (across the width of the trench) from the probe to detect the side walls of the trench.

Abstract: A method and apparatus for automatically detecting defects on the surfaces of semiconductor wafers and chips which provides a 100% inspection capability. The entire surface of each wafer is scanned by use of a low magnification, low resolution detector such as a photodiode array. Whenever a defect occurs, encoders on the supporting XY table are triggered, such that the location of a defect on the wafer is recorded. After the event coordinates have been determined, the XY table positions each defect directly under a high magnification detector to determine the nature of the detected event. Since only the locations of the detected events are stored, 100% of the processed wafers can be scanned for defects.

Abstract: A chip registration mechanism may form a part of a carrier for retaining in position a plurality of integrated circuit chips in row and column fashion having identification codes on one surface thereof, such that the chip codes may be read and cooperate with a tray having multiple cells, with each cell receiving an individual integrated circuit chip, or function to position a single chip relative to a reference surface for processing. A chip registration base member includes a pedestal projecting upwardly from a base member within a cavity having transverse dimensions oversized relative to the chip and defining at least one lateral reference surface. A lid extends across the top of the member partially defines the cavity above the chip with the chip resting on the top of the pedestal.

Abstract: A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated.