Patents by Inventor Henri Jaffres

Henri Jaffres has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Control device for reversing the direction of magnetisation without an external magnetic field
    Patent number: 7459998
    Abstract: The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.
    Type: Grant
    Filed: July 26, 2002
    Date of Patent: December 2, 2008
    Assignee: Thales
    Inventors: Frédéric Nguyen Van Dau, Vincent Cros, Jean-Marie George, Julie Grollier, Henri Jaffres, Frédéric Petroff
  • Magnetic field sensor using magnetoresistance and method for making same
    Patent number: 7094480
    Abstract: The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (101), an insulating layer (103), a second ferromagnetic layer (102) and an antiferromagnetic layer (104). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.
    Type: Grant
    Filed: April 27, 2001
    Date of Patent: August 22, 2006
    Assignee: Thales
    Inventors: Frederic Nguyen Van Dau, Henri Jaffres, Daniel Lacour
  • Variable capacitor voltage-controllable by use of coulomb blocking phenomenon
    Patent number: 6903915
    Abstract: Variable capacitive device, such as a capacitor, controllable in voltage Vc including at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other. The use of the capacitor according to the invention in a resonant circuit.
    Type: Grant
    Filed: November 13, 2001
    Date of Patent: June 7, 2005
    Assignee: Thales
    Inventors: Alain Friederich, Frédérich Nguyen Van Dau, Albert Fert, Henri Jaffres
  • Variable capacitance voltag-controlllable by use of coulomb barrier phenomenon
    Publication number: 20040047110
    Abstract: Variable capacitive device, such as a capacitor, controllable in voltage Vc comprising at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other.
    Type: Application
    Filed: May 16, 2003
    Publication date: March 11, 2004
    Inventors: Alain Friederich, Frederich Nguyen Van Dau, Albert Fert, Henri Jaffres
  • Magnetic field sensor using magnetoresistance and method for making same
    Publication number: 20030157368
    Abstract: The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field.
    Type: Application
    Filed: November 18, 2002
    Publication date: August 21, 2003
    Inventors: Frederic Nguyen Van Dau, Henri Jaffres, Daniel Lacour