Abstract: A method of forming at least one feature on a substrate of a component for an electrical and/or optical device is provided. The method may include applying a masking layer on the substrate. The masking layer may define at least one cavity that is positioned between portions of the masking layer. The method may include applying a first layer of a first material on the masking layer and applying a second layer of a second material on the first layer. The method may include removing a first portion of the first layer and a first portion of the second layer with an etching process.

Abstract: Embodiments of the disclosure provide apparatuses, systems, and methods related to photonic devices. A method for fabricating photonic devices may include forming a mask layer on a surface of a mold layer. The mask layer may define one or more openings that expose one or more select portions of a surface of the mold layer. The method may include etching through the one or more openings to form one or more cavities within the mold layer and depositing photonic material within the one or more cavities. Depositing the photonic material may include overfilling the one or more cavities to form an over-filled layer on the mask layer. The method may include removing the over-filled layer and the hard mask layer.

Abstract: High-performance optical-metasurface-based components configured to at frequencies of UV light and, in particular, in deep UV range and performing multiple optical-wavefront-shaping functions (among which there are high-numerical-aperture lensing, accelerating beam generation, and hologram projection). As a representative material for such components, hafnium oxide demands creation and establishment of a novel process of manufacture that is nevertheless based on general principles of Damascene lithography, to be compatible with existing technology and yet sufficient for producing high-aspect-ratio features that currently-used materials and processes simply do not deliver. The described invention opens a way towards low-form-factor, multifunctional ultraviolet nanophotonic platforms based on flat optical components and enabling diverse applications including lithography, imaging, spectroscopy, and quantum information processing.

Abstract: High-performance optical-metasurface-based platform configured with the use of Tantalum Pentoxide to operate with extremely low levels of loss at frequencies of UV light and, in particular, in mid- and near-UV ranges and performing multiple optical-wavefront-shaping functions (among which there are high-numerical-aperture lensing, accelerating beam generation, and hologram projection). Process of fabrication of such metasurface producing near-zero levels of optical loss and employing the otherwise standard etching methodologies. Embodiments facilitate the development of low-form-factor, multifunctional ultraviolet nanophotonic platforms based on flat optical components and enabling diverse applications including lithography, imaging, spectroscopy, and quantum information processing.

Abstract: High-performance optical-metasurface-based components configured to at frequencies of UV light and, in particular, in deep UV range and performing multiple optical-wavefront-shaping functions (among which there are high-numerical-aperture lensing, accelerating beam generation, and hologram projection). As a representative material for such components, hafnium oxide demands creation and establishment of a novel process of manufacture that is nevertheless based on general principles of Damascene lithography, to be compatible with existing technology and yet sufficient for producing high-aspect-ratio features that currently-used materials and processes simply do not deliver. The described invention opens a way towards low-form-factor, multifunctional ultraviolet nanophotonic platforms based on flat optical components and enabling diverse applications including lithography, imaging, spectroscopy, and quantum information processing.

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract: A slot waveguide utilized as a color-selecting element. The slot waveguide includes a first layer of plasmon supporting material, the first layer being optically opaque and having an input slit extending through the first layer; a second layer of plasmon supporting material facing the first layer and separated from the first layer by a first distance in a first direction, the second layer being optically opaque and having an output slit extending through the second layer and separated from the input slit by a second distance extending along a second direction differing from first direction; a dielectric layer interposed between the first layer and the second layer, the dielectric layer having a real or complex refractive index; and a power source electrically coupled to the first layer and the second layer to apply an electrical signal for modulation of the real or complex refractive index of the dielectric layer.

Abstract: A slot waveguide utilized as a color-selecting element. The slot waveguide includes a first layer of plasmon supporting material, the first layer being optically opaque and having an input slit extending through the first layer; a second layer of plasmon supporting material facing the first layer and separated from the first layer by a first distance in a first direction, the second layer being optically opaque and having an output slit extending through the second layer and separated from the input slit by a second distance extending along a second direction differing from first direction; a dielectric layer interposed between the first layer and the second layer, the dielectric layer having a real or complex refractive index; and a power source electrically coupled to the first layer and the second layer to apply an electrical signal for modulation of the real or complex refractive index of the dielectric layer.

Abstract: A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.

Abstract: A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.

Abstract: The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface.

Abstract: The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface.

Abstract: A graphical programming system allows a user to place geometric shapes onto a scaled image, the shape having associated behavior that operates on the image or on the object of which the image is formed. In a preferred embodiment, the shapes are objects in the Visio program by Microsoft Corporation. The shapes are dragged from a stencil onto an image provided by ion beam or electron microscope image. The shape invokes software or hardware to locate and measure features on the image or to perform operations, such as ion beam milling, on the object that is imaged.