Abstract: The invention relates to a heterostructure including a first region (R1) made of a first n-doped semiconductor material, a second region (R2) made of a second p-doped semiconductor material and, between said first and second regions, a type-II superlattice (SR) made up of an alternation of layers (C1, C2) of a third and fourth semiconductor material, said layers being thin enough for the carriers to be displaced inside said superlattice, forming at least one electron mini-band (MBe) and one hole mini-band (MBh), the interfaces between the first region and the superlattice, between the layers of the superlattice and between the superlattice and the second region being mutually parallel. The invention also relates to a photovoltaic cell including such a heterostructure as an active element. The invention further relates to a solar panel including a combination of such photovoltaic cells.

Abstract: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.

Abstract: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.