Abstract: In this generator a first current mirror (MP1, MP2) forms two circuit branches to be connected between supply terminals (V.sub.DD, V.sub.SS). Each of the branches includes transistors (MP1, MN1; MP2, MN2) which are series connected and have opposite conductivity types. A second current mirror (MP3, MN3) yields an image (i.sub.3) of the current (i1) flowing in one of the branches. An active component (MN4) forming a variable conductance is connected in series in this branch and is controlled in such a way that its value varies nonlinearly with the current image (i.sub.3). This conductance is thus traversed by a current whose intensity depends solely on the technological characteristics of the active component.

Abstract: A reference voltage source implemented in silicon-gate CMOS transistor technology comprises a pair of reference transistors of the same conductivity type, the gates of which are made of polycrystalline silicon and differ from each other by the type of doping. The reference voltage can be temperature-compensated by adding an auxiliary compensation voltage source or by establishing a predetermined ratio of current densities in the pair of reference transistors operating in weak inversion.