Patents by Inventor Henri Sibuet
Henri Sibuet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9620581Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.Type: GrantFiled: June 10, 2015Date of Patent: April 11, 2017Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Sylvain Pelloquin, Christel Dieppedale, Gwenael Le Rhun, Henri Sibuet
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Patent number: 9521794Abstract: A method for producing a microelectronic device including a substrate and a stack having at least one electrically conductive layer and at least one dielectric layer. The method includes formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern having a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part having at least one inclined wall as far as the face of the substrate. With formation of the stack, the layers of the stack helping at least partially fill in the pattern. The stack is thinned of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, and at least one electrical connection member is formed on the substrate in contact with the edge of the at least one electrically conductive layer.Type: GrantFiled: February 28, 2014Date of Patent: December 13, 2016Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventor: Henri Sibuet
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Publication number: 20150357401Abstract: A method and an electrical device with superimposed layers in an alternation of conductive layers and insulating layers. A mesa-type structure is formed, leaving for at least one conductive layer, an uncovered peripheral portion accessible for connection. In this portion, an electrically insulating pattern is configured in order to mark out an electrically insulated area located in the peripheral portion of said at least one of the electrically conductive layers. Application to electrical capacitances and redistribution layers for microelectronic devices.Type: ApplicationFiled: June 10, 2015Publication date: December 10, 2015Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Sylvain PELLOQUIN, Christel DIEPPEDALE, Gwenael LE RHUN, Henri SIBUET
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Patent number: 9181088Abstract: An assembly of two objects integral with each other through at least one linking element provided between both objects, said linking element including at least a first material portion comprising intermetallic compounds of a phase formed with a first brazing metal and a second metal the melting point of which is higher than that of the first brazing metal, said linking element further including at least a second material portion composed of at least a third metal, said second material portion contacting both objects.Type: GrantFiled: August 26, 2011Date of Patent: November 10, 2015Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Henri Sibuet, Xavier Baillin, Nicolas Sillon
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Patent number: 9153394Abstract: The invention concerns a method for the fabrication, on a plane substrate, of a microswitch actuatable by a magnetic field, comprising: a) the etching, in the upper face of the plane substrate, of cavities forming a hollow model of two strips, these cavities having vertical flanks extending perpendicularly to the plane of the substrate to form vertical faces of the strips, b) the filling of the cavities by a magnetic material to form the strips, then c) the etching in the substrate, by a method of isotropic etching, of a well that extends between the vertical faces of the strips and beneath and around one distal end of at least one of the strips to open out an air gap between these strips and make this distal end capable of being shifted between a closed position and an open position.Type: GrantFiled: December 30, 2011Date of Patent: October 6, 2015Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Henri Sibuet, Yannick Vuillermet
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Patent number: 9070982Abstract: A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on an electronic device; at least one integrated circuit chip assembled on the upper surface of the interposer; at least one antenna including at least one track formed on the upper surface of the interposer; and at least one block attached under the plate and including in front of each antenna a cavity having a metalized bottom, the distance between each antenna and the bottom being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.Type: GrantFiled: June 6, 2012Date of Patent: June 30, 2015Assignees: STMicroelectronics (Crolles 2) SAS, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Jean-François Carpentier, Laurent Dussopt, Henri Sibuet
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Publication number: 20140240939Abstract: The invention concerns a method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least on dielectric layer, wherein it comprises the following steps: formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate, formation of the stack, the layers of the stack helping to at least partially fill in the pattern, thinning of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, formation of at least one electrical connection member (710, 720) on the substrate in contact with the edge of saiType: ApplicationFiled: February 28, 2014Publication date: August 28, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventor: Henri SIBUET
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Patent number: 8685777Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.Type: GrantFiled: July 5, 2011Date of Patent: April 1, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Christel Dieppedale, Stephan Borel, Bruno Reig, Henri Sibuet
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Patent number: 8531257Abstract: A magnetically actuatable contactor has first and second magnetic material strips extending longitudinally. Each has a pad with a contact face parallel to the longitudinal direction. The pads face each other when an intersection of the one contact face and a projection in a transversal direction of the other contact face forms an overlap zone having a surface area. A pad is capable of being transversally shifted in response to a magnetic field between closed and opened positions. In closed position and open positions, the faces and respectively in contact and separated. At least one strip forms pairs of facing pads disposed consecutively along the longitudinal direction. A bridge links two consecutive pads. A cross-section of the bridge is reduced relative to a cross-section of the pads and a surface area of a smallest cross-section of the bridge.Type: GrantFiled: January 11, 2012Date of Patent: September 10, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Yannick Vuillermet, Henri Sibuet
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Patent number: 8390407Abstract: A micromachined electromechanical (MEMS) actuator including, for example, an electrostatically actuated electrical switch, is provided, including a first set of conducting plates forming part of the movable element of the switch, interdigitated with a set of conducting plates forming part of the substrate. The plates are, in principle, vertical relative to the surface of the substrate; they are in partial heightwise overlap and a control voltage applied between the two sets of plates exerts a vertical force acting so as to move the movable element closer to the substrate. The conducting plates of the movable element are connected to one another by conducting end crosspieces connecting the ends of these plates so as to surround, laterally, the stationary conducting plates. The distance separating one stationary plate end from the mobile crosspiece is the same at both ends so that the forces exerted in the elongation direction of the plates cancel out. This distance is preferably the same for all the plates.Type: GrantFiled: September 10, 2010Date of Patent: March 5, 2013Assignee: Commissariat a l'Energie AtomiqueInventors: Bernard Diem, Henri Sibuet
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Publication number: 20130027274Abstract: A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on an electronic device; at least one integrated circuit chip assembled on the upper surface of the interposer; at least one antenna including at least one track formed on the upper surface of the interposer; and at least one block attached under the plate and including in front of each antenna a cavity having a metalized bottom, the distance between each antenna and the bottom being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.Type: ApplicationFiled: June 6, 2012Publication date: January 31, 2013Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, STMICROELECTRONICS (CROLLES 2) SASInventors: Jean-François Carpentier, Laurent Dussopt, Henri Sibuet
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Publication number: 20120182100Abstract: The invention pertains to a contactor actuatable by a magnetic field wherein: first and second strips comprise pads forming several pairs of pads P1i, P2i facing each other, immediately consecutive along the longitudinal direction, and each strip comprises at least one bridge Ptji, each bridge mechanically and directly linking two immediately consecutive pads Pji, Pj,i+1 of a same strip, the cross-section of this bridge Ptji being reduced as compared with the cross-section of the pads Pji et Pj,i+1, and the surface area SPtji of the smallest cross-section of the bridge Ptji verifying the following relationship: 0<SPtji<?SZi, where SZi is the surface area of an overlap zone between the contact faces of a pair of pads P1i, P2i, j is an index identifying the strip and i is an index identifying the pad of this strip.Type: ApplicationFiled: January 11, 2012Publication date: July 19, 2012Applicant: Commissariat a l'energie atomique et aux energies alternativesInventors: Yannick Vuillermet, Henri Sibuet
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Publication number: 20120168886Abstract: The invention concerns a method for the fabrication, on a plane substrate, of a microswitch actuatable by a magnetic field, comprising: a) the etching, in the upper face of the plane substrate, of cavities forming a hollow model of two strips, these cavities having vertical flanks extending perpendicularly to the plane of the substrate to form vertical faces of the strips, b) the filling of the cavities by a magnetic material to form the strips, then c) the etching in the substrate, by a method of isotropic etching, of a well that extends between the vertical faces of the strips and beneath and around one distal end of at least one of the strips to open out an air gap between these strips and make this distal end capable of being shifted between a closed position and an open position.Type: ApplicationFiled: December 30, 2011Publication date: July 5, 2012Applicant: Commissariat a l'energie atomique et aux energies alternativesInventors: Henri Sibuet, Yannick Vuillermet
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Publication number: 20120052313Abstract: An assembly of two objects integral with each other through at least one linking element provided between both objects, said linking element including at least a first material portion comprising intermetallic compounds of a phase formed with a first brazing metal and a second metal the melting point of which is higher than that of the first brazing metal, said linking element further including at least a second material portion composed of at least a third metal, said second material portion contacting both objects.Type: ApplicationFiled: August 26, 2011Publication date: March 1, 2012Applicant: COMMISSARIAT A L 'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Henri SIBUET, Xavier BAILLIN, Nicolas SILLON
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Publication number: 20120021550Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.Type: ApplicationFiled: July 5, 2011Publication date: January 26, 2012Inventors: CHRISTEL DIEPPEDALE, STEPHAN BOREL, BRUNO REIG, HENRI SIBUET
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Publication number: 20110220470Abstract: A micromachined electromechanical (MEMS) actuator including, for example, an electrostatically actuated electrical switch, is provided, including a first set of conducting plates forming part of the movable element of the switch, interdigitated with a set of conducting plates forming part of the substrate. The plates are, in principle, vertical relative to the surface of the substrate; they are in partial heightwise overlap and a control voltage applied between the two sets of plates exerts a vertical force acting so as to move the movable element closer to the substrate. The conducting plates of the movable element are connected to one another by conducting end crosspieces connecting the ends of these plates so as to surround, laterally, the stationary conducting plates. The distance separating one stationary plate end from the mobile crosspiece is the same at both ends so that the forces exerted in the elongation direction of the plates cancel out. This distance is preferably the same for all the plates.Type: ApplicationFiled: September 10, 2010Publication date: September 15, 2011Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUEInventors: Bernard Diem, Henri Sibuet
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Patent number: 6885520Abstract: An integrated magnetic head including a thin layer structure. The thin layer structure contains, in the edge of the structure constituting the reading and/or writing face of the magnetic head, two pole pieces separated by a gap and aligned longitudinally. The pole pieces are contained in the transverse direction with respect to the structure between parallel planes of the thin layer structure. The magnetic head bas two layers of wear-resistant material which frame the thin layer structure to reinforce the wear resistance of the reading and/or writing face.Type: GrantFiled: March 21, 2001Date of Patent: April 26, 2005Assignee: Commissariat a l'Energie AtomiqueInventors: Mickaël Fievre, Jean-Baptiste Albertini, Pierre Gaud, Henri Sibuet
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Publication number: 20050078410Abstract: According to the invention, which applies in particular to helicoidal recording on tape, for example an integrated magnetic head comprising a thin layer structure whose portion which forms the reading and/or writing face of the head contains two polar parts (64, 66) separated by a gap (68) and longitudinally aligned, contained, in the direction transversal to the structure between two parallel planes (P1, P2) and in this portion, between the planes, on either side of the parts, at least one wear resistant material (70) is formed.Type: ApplicationFiled: December 24, 2002Publication date: April 14, 2005Inventors: Michael Fievre, Jean-Baptiste Albertini, Pierre Gaud, Henri Sibuet
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Patent number: 6555294Abstract: A process for collectively making integrated magnetic heads with a bearing surface obtained by photolithography. According to the process, on a wafer is deposited a plurality of heads, a mask defining the profile of the bearing surfaces and the wafer is collectively engraved in the vicinity of the pole pieces of the heads. Such a process may find particular application to the making of magnetic heads.Type: GrantFiled: January 29, 2001Date of Patent: April 29, 2003Assignee: Commissariat a l'Energie AtomiqueInventors: Jean-Baptiste Albertini, Pierre Gaud, Gérard Barrois, Henri Sibuet
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Publication number: 20030076625Abstract: The invention relates to an integrated magnetic head comprising a thin layer structure, the thin layer structure containing, in the edge of the structure constituting the reading and/or writing face of the magnetic head, two pole pieces (47, 49) separated by a gap (46A) and aligned longitudinally. The pole pieces are contained in the transverse direction with respect to the structure between parallel planes of the thin layer structure. The magnetic head has two layers (52, 53) of wear-resistant material which frame the thin layer structure to reinforce the wear resistance of the reading and/or writing face.Type: ApplicationFiled: September 16, 2002Publication date: April 24, 2003Inventors: Mickael Fievre, Jean-Baptiste Albertini, Pierre Gaud, Henri Sibuet