Patents by Inventor Henri Valdmann

Henri Valdmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Planar avalanche diode with a breakdown voltage between 4 and 8 volts
    Patent number: 4323909
    Abstract: A diode comprising a N-type substrate in which is formed a P-type guard ring and a central diffusion of the same type but of reduced depth. Part of the central diffusion layer is interrupted by a masking island. Diffusion is for example obtained from an epitaxial layer.
    Type: Grant
    Filed: April 15, 1980
    Date of Patent: April 6, 1982
    Assignee: Thomson-CSF
    Inventor: Henri Valdmann