Patents by Inventor Henricus Anita Jozef Wilhemus VAN DE VEN

Henricus Anita Jozef Wilhemus VAN DE VEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gas flow optimization in reticle stage environment
    Patent number: 10031428
    Abstract: A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: July 24, 2018
    Assignees: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Koen Cuypers, Marcelo Henrique De Andrade Oliveira, Marinus Jan Remie, Chattarbir Singh, Laurentius Johannes Adrianus Van Bokhoven, Henricus Anita Jozef Wilhemus Van De Ven, José Nilton Fonseca Junior, Frank Johannes Jacobus Van Boxtel, Daniel Nathan Burbank, Erik Roelof Loopstra, Johannes Onvlee, Mark Josef Schuster, Robertus Nicodemus Jacobus Van Ballegoij, Christopher Charles Ward, Jan Steven Christiaan Westerlaken
  • Gas Flow Optimization in Reticle Stage Environment
    Publication number: 20150355557
    Abstract: A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.
    Type: Application
    Filed: February 20, 2014
    Publication date: December 10, 2015
    Applicants: ASML Netherlands B.V., ASML Holding N.V.
    Inventors: Koen CUYPERS, Marcelo Henrique DE ANDRADE OLIVEIRA, Marinus Jan REMIE, Chattarbir SINGH, Laurentius Johannes Adrianus VAN BOKHOVEN, Henricus Anita Jozef Wilhemus VAN DE VEN, José Nilton FONSECA JUNIOR, Frank Johannes Jacobus VAN BOXTEL, Daniel Nathan BURBANK, Erik Roelof LOOPSTRA, Johannes ONVLEE, Mark Josef SCHUSTER, Robertus Nicodemus Jacobus VAN BALLEGOIJ, Christopher Charles WARD, Jan Steven Christiaan WESTERLAKEN