Patents by Inventor HENRIK HENRIKOVYCH SHUMINSKYI

HENRIK HENRIKOVYCH SHUMINSKYI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230413678
    Abstract: A method of manufacturing an ambient energy converter that includes a supporting substrate of a first conductor material as a first electrode, a layer of ferroelectric material, and a layer of a second conductor material as a second electrode. The two conductor materials have different concentrations of free electrons. The ferroelectric material includes one or more ferroelectric semiconductors. The method includes providing a plate of the conductor material for the first electrode as a supporting substrate, subjecting the carrier substrate to a surface treatment, depositing the layer of ferroelectric material (BTO layer) on a front side of the carrier substrate, masking the edges of the BTO layer on the front side of the carrier substrate while leaving at least one portion located within the edges of the BTO layer free, and applying the conductor material intended for the second electrode to the area kept free of masking.
    Type: Application
    Filed: June 22, 2023
    Publication date: December 21, 2023
    Inventors: HENRIK HENRIKOVYCH SHUMINSKYI, OLEKSANDR IVANOVYCH HETMAN
  • Publication number: 20190044457
    Abstract: Electrical power generator comprises a case (1) with a package of conductive plates of both signs including at least one unit cell, which consists of one layer of a ferroelectric material (3) and two dissimilar conductive plates which are placed in the following order: a conductive plate (2)—a ferroelectric material (3)—a conductive plate different from the first one (2). All the layers in the package are tightly fit to each other and the conductive plates (2) are made of dissimilar conductors with different concentration of free electrons. Ferroelectric semiconductors that are used as the ferroelectric material can be chosen from the list of sodium nitrite, semiconductor ceramics based on barium titanite, lithium niobate, potassium niobate, lead titanite, etc.
    Type: Application
    Filed: April 11, 2017
    Publication date: February 7, 2019
    Inventors: HENRIK HENRIKOVYCH SHUMINSKYI, OLEKSANDR IVANOVYCH HETMAN