Patents by Inventor Henry A. Luten, III

Henry A. Luten, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrophobic coatings and methods
    Patent number: 7138186
    Abstract: Substrates have a hydrophobic surface coating comprised of the reaction products of methyltrichlorsilane (MTCS) and dimethyldichlorosilane (DMDCS). Most preferably the substrate is glass. An anchor layer is most preferably formed directly onto the glass substrate surface by means of the application of a humidified reaction product of silicon tetrachloride, followed by the vapor-deposition of MTCS as a cross-linking layer. The hydrophobic layer of MTCS and DMDCS may then be applied over the cross-linking layer of MTCS. A capping layer formed of trimethylchlorosilane (TMCS) may then be vapor deposited onto the hydrophobic layer.
    Type: Grant
    Filed: February 5, 2004
    Date of Patent: November 21, 2006
    Assignee: Guardian Industries Corp.
    Inventor: Henry A. Luten, III
  • Electronic and optical materials
    Patent number: 6986955
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: January 17, 2006
    Assignee: nGimat Co.
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten, III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt
  • Electronic and optical materials
    Publication number: 20030228500
    Abstract: Epitaxial and reduced grain boundary materials are deposited on substrates for use in electronic and optical applications. A specific material disclosed is epitaxial barium strontium titanate (14) deposited on the C-plane of sapphire (12).
    Type: Application
    Filed: December 26, 2001
    Publication date: December 11, 2003
    Inventors: Jerome Schmitt, George Guang-Ji Cui, Henry A. Luten III, Fang Yang, Fe Alma Gladden, Scott Flanagan, Yongdong Jiang, Andrew Tye Hunt
  • Nanostructure coatings
    Patent number: 6372364
    Abstract: A thin film product having a nanostructured surface, a laminate product including the thin film and a temporary substrate opposite the nanostructured surface, a laminate product including the thin film and a final substrate attached to the nanostructured surface and a method of producing the thin film products. The thin film is particularly useful in the electronics industry for the production of integrated circuits, printed circuit boards and EMF shielding. The nanostructured surface includes surface features that are mostly smaller than one micron, while the dense portion of the thin film is between 10-1000 nm. The thin film is produced by coating a temporary substrate (such as aluminum foil) with a coating material (such as copper) using any process. One such method is concentrated heat deposition or a combustion, chemical vapor deposition process.
    Type: Grant
    Filed: August 18, 1999
    Date of Patent: April 16, 2002
    Assignee: MicroCoating Technologies, Inc.
    Inventors: Andrew T. Hunt, Henry A. Luten, III
  • Dopants for semiconducting materials
    Patent number: 6265597
    Abstract: A magnesium amide for use as a magnesium donor not having any Mg—C bonds. The compound is useful for doping GaN with Mg+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.
    Type: Grant
    Filed: February 2, 2000
    Date of Patent: July 24, 2001
    Assignee: Georgia Tech Research Corp.
    Inventors: William S. Rees, Jr., Henry A. Luten, III
  • Dopants for semiconducting materials
    Patent number: 6156917
    Abstract: A magnesium amide for use as a magnesium donor not having any Mg--C bonds. The compound is useful for doping GaN with Mg.sup.+2. The compound of the present invention is a high molecular weight dimer, preferably a diamide containing one or more silicon substituent groups. Alternatively, the compounds of the present invention may contain amino nitrogens weakly bonded to Mg. The compounds must have sufficient volatility to be useful in chemical vapor deposition.
    Type: Grant
    Filed: July 10, 1997
    Date of Patent: December 5, 2000
    Assignee: Georgia Tech Research Corporation
    Inventors: William S. Rees, Jr., Henry A. Luten, III