Abstract: A reflected radiance sensor is held in a spaced-apart relationship with a surface so the field of view of the sensor intersects the surface so that the radiation reflected off the surface can be detected and measured. The sensor is configured to detect only reflected radiation so that the reflected radiation is accurately measured without any direct incident component. A support structure is utilized to hold the detector of the sensor in place. The support structure is preferably made of material that is substantially invisible (i.e., transparent) to the radiation wavelength band of interest. The design of a support structure in accordance with the present invention is not limited to any one design, but may be designed for optimum performance in a particular application.

Abstract: A high responsivity thermochromic infrared detector which has an operating temperature that is established on the steepest part of the phase transition curve and is maintained there while the infrared detector is operated.

Abstract: A fiber optic spatial light modulation system which includes a light source which produces source light, an optical fiber bundle which includes a plurality of individual optical fibers, and a spatial light modulator which is interposed between the light source and the optical fiber bundle, and which selectively modulates the amount of the source light coupled into each of the individual optical fibers, wherein the amount of the source light coupled into different ones of the individual optical fibers can be unequal.

Abstract: A high responsivity thermochromic infrared detector which has an operating temperature that is established on the steepest part of the phase transition curve and is maintained there while the infrared detector is operated.

Abstract: A variable power laser device includes a lasing medium having first and second end faces disposed parallel to one another, N side faces extending between the first and second end faces and a bevel face located at an intersection between the second end and one of the side faces, a first mirror separate from the first end face for directing a laser beam into the lasing medium so as to permit the laser beam to follow a helical transmission path defined by the N side faces, the transmission path being longer than the length of any of the N side faces, and a second mirror separate from the second end face for receiving an amplified laser beam output by the lasing medium and reflecting the amplified laser beam in a predetermined direction, wherein N is an integer greater than or equal to 3. The output power of the amplified laser beam is dependent on the number of loops in the transmission path.

Abstract: The invention is embodied in a non-volatile metal-insulator-semiconductor having a novel combination of insulating layers including a titanium dioxide layer covered by a silicon dioxide layer. In one embodiment of the invention the insulator combination also includes a second layer of silicon dioxide located between the titanium dioxide and the semiconductor. In another embodiment the insulator combination also includes a layer of silicon nitride located between the titanium dioxide layer and the semiconductor. The memory elements are fabricated using a novel sequence of steps for forming multiple dielectric layers. The titanium dioxide of a type known as rutile is formed by evaporation of titanium metal upon the silicon dioxide and oxidation of the titanium in an oxygen ambient at high temperatures. Writing is accomplished by injection of charge into the titanium dioxide layer thus shifting the threshold voltage of the structure.

Abstract: Non-volatile metal-insulator-semiconductor memory elements are fabricated using a novel sequence of steps for forming multiple dielectric layers including particularly a layer of titanium dioxide covering a layer of silicon dioxide covering a layer of silicon nitride. The titanium dioxide of a type known as rutile is formed by evaporation of titanium upon the silicon dioxide and oxidization of the titanium in an oxygen ambient at high temperatures.

Abstract: Non-volatile metal-insulator-semiconductor memory elements are fabricated using a novel sequence of steps for forming multiple dielectric layers including particularly a layer of titanium dioxide covering a layer of silicon dioxide covering a layer of silicon nitride. The titanium dioxide of a type known as rutile is formed by evaporation of titanium upon the silicon dioxide and oxidization of the titanium in an oxygen ambient at high temperatures.

Abstract: The invention is embodied in a novel method of forming titanium dioxide layers for metal-insulator-semiconductor device dielectrics. The titanium dioxide of a type known as rutile is formed by the deposition of titanium metal upon a layer of silicon dioxide and oxidation of titanium in an oxygen ambient at high temperatures.

Abstract: This disclosure is directed to a photovoltaic detector having specific response to the infrared range, wherein the detector comprises a metal-semiconductor diode having a semi-transparent electrode and disposed on a specially prepared substrate of a narrow band gap semiconductor material or on an epitaxial layer or evaporated film of such material provided on a substrate. In a specific example, the narrow band gap semiconductor material of the substrate is specially prepared (Pb,Sn)Te or an epitaxial layer or evaporated film of (Pb,Sn)Te on a (Pb,Sn)Te substrate. The detected radiation is transmitted through the semi-transparent electrode on top of the photovoltaic detector.