Abstract: Nanometer thick metallic layers are fabricated on trenches or holes (espelly vias) within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memory/circuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits.

Abstract: A field emitter array memory device having two or more collector electrod an extraction electrode, at least one deflector electrode, and at least one electron field emitter is disclosed. The field emitter array memory circuit has bias voltages for collector electrodes, for the at least one deflector electrode and for the extraction electrode. In a preferred embodiment of the invention, first and second input signal voltages selectively applied to first and second deflector electrodes selectively switch the flow of electrons emitted from an electron field emitter from a first collector electrode to a second collector electrode and vice versa. A latched memory output is also included. Electron flow from the electron field emitter to one of the first and second collector electrodes is maintained until a signal voltage is applied to a deflector electrode to cause the electron flow to deflect from one collector electrode to the other collector electrode.

Abstract: A field-emitter-array device includes layers of conductive material and irvening layers of insulating material. The lateral edges of the layers form a field-emitter array including a field emitter edge electrode interposed between a pair of control electrodes. The control electrode edges produce an electric field causing the flow of field emitted electrons to be substantially parallel to the plane of the control and field emitter edge electrodes. The direction of electron flow can be further controlled by additional electrodes in the form of additional conductive layers or external electrodes.

Abstract: A field emitter structure is disclosed which comprises: a substrate selec from the group consisting of a semi-insulating substrate and an insulating substrate, the substrate having first and second surfaces and at least one hole therethrough; a first conducting layer disposed on the first surface of the substrate and having at least one aperture aligned with an associated at least one hole in the substrate, the at least one aperture of the first conducting layer comprising an extraction electrode; and a second conducting layer disposed on the second surface and projecting into the at least one hole in the substrate and into the at least one associated aperture of the first conducting layer and forming at least one associated apex inside the at least one hole, the at least one associated apex comprising an associated electron field emitter.

Abstract: A method of constructing ultra-low-loss miniaturized microstrip type microwave transmission lines, circuits, and resonators and their resulting structures are disclosed. The method includes etching a groove of the appropriate width and depth into the surface of a first substrate as determined by a preselected characteristic impedance. Appropriate thin film superconductors are then deposited on the surfaces of the first substrate and a second substrate. The thin film superconductors are then patterned after which the two substrates are sealed together by field-assisted thermal bonding such that a novel two-conductor electromagnetic transmission line results.

Abstract: A method for fabricating field emitter arrays is disclosed which uses a substrate as both an emitter tip mold and an insulating layer. A thick single crystal substrate is orientation-dependent-etched on one side to form a plurality of holes having crystallographically sharp apices or a non-crystalline substrate is etched on one side to form a plurality of holes with a high depth-to-width ratio. An emitter layer is deposited on the substrate surface and in the plurality of holes. The remainder of the field emitter array structure is then formed on the opposite side of the substrate using conventional deposition and etching techniques. Once the emitter is formed, the remaining fabrication steps are self-aligning. The field emitter array thus formed exhibits high input impedance at high frequency, making the field emitter array suitable for high frequency uses.

Abstract: A field emitter array comparator is provided wherein voltage or current it signals supplied to at least two deflectors control the selective deflection of a beam of electrons to one collector of a collector array of at least two collectors. The beam of electrons is generated by a source of electrons, such as a field emitter array, in an evacuated chamber, and the at least two deflectors are disposed in preselected positions relative to the electron source. The input signals to the at least two deflectors cause deflection of the beam of electrons in the direction of the deflector to which the most positive signal is applied, thus causing the electron beam to strike a collector positioned in the path of the deflected beam. This results in a reduction in voltage associated with that collector. In general, the voltages on the collectors are used to determine whether the signal inputs are equal or, if unequal, which input has the greastest magnitude.

Abstract: An apparatus and method for pumping a gas laser, wherein a field emitter is sed to emit electrons into the gas to effect laser pumping. The low energy electrons emitted by field emitters, and the fine controllability of electron energy permitted by field emitters, enables one to effect population inversion of the laser gas, without ionizing the gas, or causing electrical breakdown.

Abstract: Distributed amplifiers in integrated circuit form wherein dielectric matel and electrically conductive material combine to form field emitter cathodes, grids, and anodes in a module forming one or more amplifier cells embedded in a matrix of reactive impedances that form companion stripline-like transmission lines in a vacuum or sufficiently low pressure gas such that electrons remain unscattered during travel over trajectories from cathode to anode in a cell.

Abstract: A process for fabricating self-aligned field emitter arrays using a self-eling planarization technique, e.g. spin-on processes, is disclosed which includes the steps of depositing a dielectric layer on top of an array of field emitters, depositing a thin conducting film over the dielectric layer, and applying a planarization layer on the thin conducting film. Thereafter the structure is selectively etched until the underlying conducting layer is exposed in regions surrounding the field emitters, thereby defining the grid apertures. The conducting layer and dielectric layer are then selectively etched sequentially to a depth sufficient to expose a field emitter cathode tip at each field emitter site. This invention uses the concept of a self-leveling, planarizing material to define the grid apertures.

Abstract: Distributed amplifiers in integrated circuit form wherein dielectric material and electrically conductive material combine to form field emitter cathodes, grids, and anodes in a module forming one or more amplifier cells embedded in a matrix of reactive impedances that form companion stripline-like transmission lines in a vacuum or sufficiently low pressure gas such that electrons remain unscattered during travel over trajectories from cathode to anode in a cell.

Abstract: A field-emitter switching device wherein a positive pulse is applied to a te (which is held at a bias potential V.sub.1 just below turn-on). A collector is held at a potential higher than the gate in order to collect emitted electrons from a field emitter source. As the voltage is applied to the gate, electrons are emitted immediately from the source and travel to the most positive potential at the collector. Because of the field emitter geometry, such electron transport is extremely fast. The ultra-fast switching speed is attained because the electrons reach near-maximum velocity within a few field tip diameters of the source.

Abstract: A Field Emitter Array comprising a semiconductor substrate with an emitter urface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

Abstract: A method of manufacturing a field-emitter array cathode structure in which substrate of single crystal material is selectively masked such that the unmasked areas define islands on the underlying substrate. The single crystal material under the unmasked areas is orientation-dependent etched to form an array of holes whose sides intersect at a crystallographically sharp point. Following removal of the mask, the substrate is covered with a thick layer of material capable of emitting electrons which extends above the substrate surface and fills the holes. Thereafter, the material of the substrate underneath the layer of electron-emitting material is etched to expose a plurality of sharp field-emitter tips.