Abstract: An RF step attenuator topology is optimized for use with GaAsFET switching devices, exploiting their high isolation while minimizing the effects of their relatively high insertion loss. The attenuator includes an attenuation network that has two inputs and two outputs, permitting four different attenuation levels to be selected by use of just one input switch and one output switch. The detailed embodiments feature high levels of attenuation (up to 140 dB in 10 dB steps), a minimum number of switches in the through-path (four), very wide band operation (250 KHz-2 GHz), and economical design.