Abstract: Systems and methods for producing microcrystalline alpha alane are provided herein. An exemplary process comprises the elimination of the crystallization aid lithium borohydride through the use of excess lithium aluminum hydride or sodium borohydride. Further exemplary processes comprise methods for passivating microcrystalline alpha alane using a weak acid in a nonaqueous solvent solution.

Abstract: Systems and methods for producing microcrystalline alpha alane are provided herein. An exemplary process comprises the elimination of the crystallization aid lithium borohydride through the use of excess lithium aluminum hydride or sodium borohydride. Further exemplary processes comprise methods for passivating microcrystalline alpha alane using a weak acid in a nonaqueous solvent solution.

Abstract: Disclosed herein are systems and methods for heating alane etherate compositions for producing microcrystalline alpha alane. An exemplary heating method comprises introducing a preheated solvent into the alane etherate composition and rapidly stirring to effectuate rapid heating of the composition without the need to heat the reactor walls. In this way, the alane etherate composition can be heated while also reducing the risk of decomposition. In further embodiments, a two-stage reactor can be employed for producing alpha alane, wherein the heating occurs in the second stage.

Abstract: Disclosed herein are systems and methods for heating alane etherate compositions for producing microcrystalline alpha alane. An exemplary heating method comprises introducing a preheated solvent into the alane etherate composition and rapidly stirring to effectuate rapid heating of the composition without the need to heat the reactor walls. In this way, the alane etherate composition can be heated while also reducing the risk of decomposition. In further embodiments, a two-stage reactor can be employed for producing alpha alane, wherein the heating occurs in the second stage.

Abstract: Systems and methods for producing microcrystalline alpha alane are provided herein. An exemplary process comprises the elimination of the crystallization aid lithium borohydride through the use of excess lithium aluminum hydride or sodium borohydride. Further exemplary processes comprise methods for passivating microcrystalline alpha alane using a weak acid in a nonaqueous solvent solution.

Abstract: Disclosed herein are systems and methods for heating alane etherate compositions for producing microcrystalline alpha alane. An exemplary heating method comprises introducing a preheated solvent into the alane etherate composition and rapidly stirring to effectuate rapid heating of the composition without the need to heat the reactor walls. In this way, the alane etherate composition can be heated while also reducing the risk of decomposition. In further embodiments, a two-stage reactor can be employed for producing alpha alane, wherein the heating occurs in the second stage.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.

Abstract: A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.

Abstract: A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.