Abstract: Force transducers are formed of a beam of polysilicon which is mounted at its ends to a silicon substrate and is encapsulated within a polysilicon shell which defines, with the substrate, a cavity around the resonating beam. The cavity is sealed off from the atmosphere and evacuated to maximize the Q of the resonating beam. The beam is produced by deposition of polysilicon in such a way that, combined with subsequent annealing steps, the beam is in zero or low tensile strain. Resonant excitation of the beam may be accomplished in various ways, including capacitive excitation, and the vibratory motion of the beam may be detected utilizing an implanted resistor which is piezoresistive. Formation of the beam is carried out by depositing the beam on a sacrificial layer and surrounding it in a second sacrificial layer before the encapsulating polysilicon shell is formed. The sacrificial layers are etched out with liquid etchant which passes through channels in the periphery of the shell.

Abstract: Micromechanical structures having surfaces closely spaced from surfaces of a substrate are formed using normal wet etching techniques but are not dried in a conventional manner. While the substrate with the microstructures formed thereon is still wet, the substrate is covered with a liquid that can be frozen, such as deionized water. The liquid on the flooded structure is then frozen in a well controlled manner such that freezing is completed before the microstructure is uncovered. The microstructures are therefore undeflected and are covered by a solid on all surfaces. This solid is then sublimated at a predetermined temperature. Because the frozen liquid (e.g., ice) supports its own surface tension, the microstructures are not drawn toward the substrate, as occurs with the drying of liquids. The sublimation of all the frozen liquid leaves undeflected microstructures with no permanent bonding of the facing surfaces of the microstructure and the substrate.

Abstract: Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) of the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post.

Abstract: Polycrystalline silicon is deposited in a film onto the surface of a substrate which has been carefully prepared to eliminate any defects or contaminants which could nucleate crystal growth on the substrate. The deposition is carried out by low pressure decomposition of silane at substantially 580.degree. C. to cause a film of fine grained crystals of polysilicon to be formed having grain sizes averaging less than about 300 Angstroms after annealing. Such a film is very uniform and smooth, having a surface roughness less than about 100 Angstroms RMS. Annealing of the film and substrate at a low temperature results in a compressive strain in the field that decreases over the annealing time, annealing at high temperatures (e.g., over 1050.degree. C.) yields substantially zero strain in the film, and annealing at intermediate temperatures (e.g., 650.degree. C. to 950.degree. C.) yields tensile strain at varying strain levels depending on the annealing temperature and time.

Abstract: Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post.

Abstract: Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post.

Abstract: Velocity saturated strain sensitive devices (13 and 14) can be formed of a layer of silicon on an insulating substrate (11) having a silicon conducting channel of a selected size and proper doping levels to allow carrier velocity saturation to occur therein at reasonable potentials applied across the conducting channel region (21, 24). When operated in velocity saturation or near thereto, a strain imposed on the device, corresponding to deformation of the substrate on which the device is formed, results in large changes in the voltage-current characteristics of the device. The large voltage-current changes occuring with strain effectively provide very high, non-linear gauge factors. Devices can be formed on an insulating substrate, such as sapphire, or can be prepared by diffusing an impurity of one conductivity type into a silicon substrate of the opposite conductivity type to form an isolated channel.

Abstract: The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements. A processing technique is disclosed which is particularly adapted to forming membranes in silicon substrates in a manner which is compatible with the construction thereon of other integrated circuit components.

Abstract: The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes constructed in accordance with the invention are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements. A processing technique is disclosed which is particularly adapted to forming membranes in silicon substrates in a manner which is compatible with the construction thereon of other integrated circuit components.

Abstract: The invention relates to an insulated-gate field effect transistor which is adapted for detecting and measuring various chemical properties such as ion activity in a solution. The device has a chemically sensitive layer which overlies a portion of a substrate other than that covered by the gate insulator. When this chemically sensitive layer is exposed to a solution or other substance, the electric field in the substrate is modified which changes the conductance of the channel between a source region and a drain region. The change in conductance is related to the chemical exposure and can be detected with a current meter.