Abstract: A superconductor device includes a high superconductivity transition temperature enhanced from the raw material transition temperature. The superconductor device includes a matrix material and a core material. The enhancing matrix material and the core material together create a system of strongly coupled carriers. A plurality of low-dimensional conductive features can be embedded in the matrix. The low-dimensional conductive features (e.g., nanowires or nanoparticles) can be conductors or superconductors. An interaction between electrons of the low-dimensional conductive features and the enhancing matrix material can promote excitations that increase a superconductivity transition temperature of the superconductor device.

Abstract: An interactive computer system and method for recruiting potential employee candidates. A user interactive Graphical User Interface (GUI) is provided on a computering device connected to a network for tracking and storing an employee candidate lifecycle with a potential employer. The GUI is preferably configured and operational to provide interactive promotional materials regarding an employment opportunity with a potential employer and establish a first video conference between the candidate and at least one representative of the potential employer.

Abstract: A magnetoresistive multilayer structure having ferromagnetic layers of Co codeposited with Cu. The codeposited layer has a total thickness between 1 and 20 .ANG.. The volume of Cu in the codeposited layers is between 1% and 120% of the volume of Co. The ferromagnetic layers are separated by layers of Cu. The resulting structure has low magnetoresistive hysteresis.

Abstract: A giant magnetoresistive assembly includes a first film fabricated of a ferromagnetic material having a first predetermined thickness, a second film fabricated of a non-ferromagnetic material formed to said first film having a second predetermined thickness greater than said first predetermined thickness, and a third film fabricated of a ferromagnetic material formed to the second film having a third predetermined thickness wherein the third predetermined thickness differs from the first predetermined thickness.

Abstract: A position detecting apparatus includes a permanent magnet which is operative to generate a magnetic field and a yoke which is provided in electromagnetic communication with the permanent magnet for guiding at least a portion of the magnetic field therethrough. The yoke includes a high-permeability magnetic material and has an air gap of predetermined lateral dimension. A variable magnetic shunt is affixed to an object whose position is sought to be detected. The magnetic field in the air gap is perturbed by the movement of the shunt causing a change in intensity measurable by a magnetoresistive sensor. The sensor generates an electrical signal which corresponds to the determined intensity of the magnetic field and to the angular/linear position of the variable shunt and the attached object.

Abstract: A novel pseudobinary alloy of Pb.sub.1-x M.sub.x S, wherein 0<x<1 and M is selected from the group consisting of Sr and Ca, exists as a single phase at all compositions. With change in composition of Pb.sub.1-x Sr.sub.x S, the energy gap at 300K has been found to change continuously from 0.4 eV for PbS to 4.6 eV for SrS. For compositions with x.ltoreq.0.2, p-type and n-type thin films have been prepared by doping with Tl or Ag and with Bi, respectively. Similar single phase behavior and composition dependence of the energy gap is found with Pb.sub.1-x Ca.sub.x S.

Abstract: A method for making and using a group IV-VI photovoltaic semiconductor diode such that its capacitance is reduced substantially with respect to its capacitance if made and used according to prior art techniques. The capacitance reduction may be obtained without detrimental effect to the detectivity and noise levels of the diode. In the currently preferred form of the method, a thin film of p conductivity type semiconductor material, PbTe, is applied to (epitaxially grown on) a cleaved BaF.sub.2 substrate. A layer of Pb is deposited on the semiconductor material to form a diode having an n+ conductivity type region in the semiconductor material and a depletion region. When the PbTe semiconductor material is applied to the BaF.sub.2 substrate, its thickness is limited such that the depletion region extends to the boundary formed between the PbTe and BaF.sub.