Patents by Inventor Henry Huang
Henry Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10339982Abstract: Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.Type: GrantFiled: June 29, 2016Date of Patent: July 2, 2019Assignee: Nantero, Inc.Inventors: Claude L. Bertin, X. M. Henry Huang, Thomas Rueckes, Ramesh Sivarajan
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Patent number: 10249684Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: GrantFiled: March 5, 2018Date of Patent: April 2, 2019Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Rueckes, X. M. Henry Huang, C. Rinn Cleavelin
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Publication number: 20190051651Abstract: Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.Type: ApplicationFiled: October 8, 2018Publication date: February 14, 2019Applicant: Nantero, Inc.Inventors: Claude L. BERTIN, Thomas RUECKES, X.M. Henry HUANG, Ramesh SIVARAJAN, Eliodor G. Ghenciu, Steven L. KONSEK, Mitchell MEINHOLD
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Publication number: 20190016231Abstract: An electric vehicle system for transporting human passengers or cargo includes an electric vehicle that includes a body, a plurality of wheels, a cargo area, an electric motor for propelling the electric vehicle, and a primary battery for providing electrical power to the electric motor for propelling the electric vehicle. An auxiliary battery module is attachable to the electric vehicle for providing electrical power to the electric motor via a first electrical connector at the auxiliary battery module and a second electrical connector at the electric vehicle that mates with the first electrical connector. The auxiliary battery module can be positioned in the cargo area while supplying power to the electric motor, and can be removable and reattachable from the electric vehicle. The auxiliary battery module includes an integrated cooling system for cooling itself during operation of the electric vehicle including a conduit therein for circulating coolant.Type: ApplicationFiled: July 11, 2018Publication date: January 17, 2019Inventors: Robert J. Scaringe, Charles Chang, Henry Huang, Patrick Hunt
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Patent number: 10096601Abstract: Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.Type: GrantFiled: January 30, 2018Date of Patent: October 9, 2018Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Rueckes, X. M. Henry Huang, Ramesh Sivarajan, Eliodor G. Ghenciu, Steven L. Konsek, Mitchell Meinhold
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Publication number: 20180197918Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: ApplicationFiled: March 5, 2018Publication date: July 12, 2018Applicant: Nantero, Inc.Inventors: Claude L. BERTIN, Thomas RUECKES, X.M. Henry HUANG, C. Rinn CLEAVELIN
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Publication number: 20180182759Abstract: Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.Type: ApplicationFiled: January 30, 2018Publication date: June 28, 2018Applicant: Nantero, Inc.Inventors: Claude L. BERTIN, Thomas RUECKES, X.M. Henry HUANG, Ramesh SIVARAJAN, Eliodor G. Ghenciu, Steven L. KONSEK, Mitchell MEINHOLD
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Patent number: 10003342Abstract: A compressor circuit includes a plurality of inputs, a sum output, and a plurality of XOR circuits. Each XOR circuit of the plurality of XOR circuits includes first, second and third inputs, and a first output. The XOR circuit is configured to generate a logic value A?B?C at the first output, where A, B and C are logic values at the corresponding first, second and third inputs, and “?” is the XOR logic operation. The plurality of XOR circuits includes first and second XOR circuits. The first, second and third inputs of the first XOR circuit are coupled to corresponding inputs among the plurality of inputs of the compressor circuit. The first output of the first XOR circuit is coupled to the first input of the second XOR circuit. The first output of the second XOR circuit is coupled to the sum output.Type: GrantFiled: June 16, 2015Date of Patent: June 19, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chi-Lin Liu, Lee-Chung Lu, Meng-Hsueh Wang, Shang-Chih Hsieh, Henry Huang, Ji-Yung Lin
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Publication number: 20180073502Abstract: A reciprocating piston pump may include a pump chamber, a piston seal, a monolithic partially fluorinated polymer piston with a fluid engaging end, a seating end, and a longitudinal outer piston surface extending between the fluid engaging end and the seating end. The reciprocating piston pump may further include a drive assembly coupled to the seating end of the monolithic partially fluorinated polymer piston. The drive assembly operates to reciprocate the monolithic partially fluorinated polymer piston within the pump chamber between full aspirate and full dispense positions. The piston seal forms an interface between the longitudinal outer piston surface of the piston and the pump chamber. The monolithic partially fluorinated polymer piston and the drive assembly are configured such that the piston seal interfaces with the longitudinal outer piston surface over a full stroke length of the drive assembly between the full aspirate and full dispense positions.Type: ApplicationFiled: August 31, 2017Publication date: March 15, 2018Applicant: Bio-Chem Fluidics, Inc.Inventors: Henry Huang, Razvan Bulugioiu, William Easterbrook
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Patent number: 9917139Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: GrantFiled: December 20, 2016Date of Patent: March 13, 2018Inventors: Claude L. Bertin, C. Rinn Cleavelin, Thomas Rueckes, X. M. Henry Huang
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Patent number: 9911743Abstract: Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.Type: GrantFiled: August 8, 2007Date of Patent: March 6, 2018Assignee: Nantero, Inc.Inventors: Claude L. Bertin, Thomas Rueckes, X. M. Henry Huang, Ramesh Sivarajan, Eliodor G. Ghenciu, Steven L. Konsek, Mitchell Meinhold, Jonathan W. Ward, Darren K. Brock
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Patent number: 9783255Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: GrantFiled: June 29, 2016Date of Patent: October 10, 2017Assignee: Nantero Inc.Inventors: Claude L. Bertin, C. Rinn Cleavelin, Thomas Rueckes, X. M. Henry Huang, H. Montgomery Manning
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Publication number: 20170200769Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: ApplicationFiled: December 20, 2016Publication date: July 13, 2017Inventors: Claude L. Bertin, C. Rinn Cleavelin, Thomas Rueckes, X.M. Henry Huang
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Patent number: 9601498Abstract: A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.Type: GrantFiled: May 23, 2011Date of Patent: March 21, 2017Assignee: Nantero Inc.Inventors: Claude L. Bertin, Mitchell Meinhold, Steven L. Konsek, Thomas Rueckes, Max Strasburg, Frank Guo, X. M. Henry Huang, Ramesh Sivarajan
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Publication number: 20160314820Abstract: Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.Type: ApplicationFiled: June 29, 2016Publication date: October 27, 2016Inventors: Claude L. BERTIN, X.M. Henry Huang, Thomas Rueckes, Ramesh Sivarajan
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Publication number: 20160315122Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: ApplicationFiled: June 29, 2016Publication date: October 27, 2016Inventors: Claude L. BERTIN, C. Rinn CLEAVELIN, Thomas RUECKES, X.M. Henry HUANG, H. Montgomery MANNING
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Patent number: 9406349Abstract: Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.Type: GrantFiled: May 2, 2014Date of Patent: August 2, 2016Assignee: Nantero Inc.Inventors: Claude L. Bertin, X. M. Henry Huang, Thomas Rueckes, Ramesh Sivarajan
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Publication number: 20160208221Abstract: Novel processes and compositions are described which use viral capsid proteins resistant to hydrolases to prepare virus-like particles to enclose and subsequently isolate and purify target cargo molecules of interest including nucleic acids such as siRNAs and shRNAs, miRNAs, messenger RNAs, small peptides and bioactive molecules.Type: ApplicationFiled: September 12, 2014Publication date: July 21, 2016Applicant: APSE, LLCInventors: Juan Pedro Humberto ARHANCET, Neena SUMMERS, Henry HUANG
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Patent number: 9390790Abstract: The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.Type: GrantFiled: December 17, 2012Date of Patent: July 12, 2016Assignee: Nantero Inc.Inventors: Claude L. Bertin, C. Rinn Cleavelin, Thomas Rueckes, X. M. Henry Huang, H. Montgomery Manning
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Publication number: 20160156358Abstract: A compressor circuit includes a plurality of inputs, a sum output, and a plurality of XOR circuits. Each XOR circuit of the plurality of XOR circuits includes first, second and third inputs, and a first output. The XOR circuit is configured to generate a logic value A?B?C at the first output, where A, B and C are logic values at the corresponding first, second and third inputs, and “?” is the XOR logic operation. The plurality of XOR circuits includes first and second XOR circuits. The first, second and third inputs of the first XOR circuit are coupled to corresponding inputs among the plurality of inputs of the compressor circuit. The first output of the first XOR circuit is coupled to the first input of the second XOR circuit. The first output of the second XOR circuit is coupled to the sum output.Type: ApplicationFiled: June 16, 2015Publication date: June 2, 2016Inventors: Chi-Lin LIU, Lee-Chung LU, Meng-Hsueh WANG, Shang-Chih HSIEH, Henry HUANG, Ji-Yung LIN