Patents by Inventor Henry Julian HINTON

Henry Julian HINTON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230184739
    Abstract: Disclosed herein are semiconductor devices to provide a CMOS-compatible, wafer-scale, multi-well platform that can be used for biomedical or other applications, and methods to operate the same. In some embodiments, circuitry is provided underneath a multiple-well array to electrically interface with electrodes in the wells. To interface with electrodes in a large array, circuitry may be fabricated on a single silicon (Si) wafer having a dimension that is at least the same or larger than that of the multiple-well array. According to one aspect of the present disclosure, standard CMOS fabrication process such as those known to be used in a standard semiconductor foundry may be used without expensive customization for complex fabrication procedures. This may help the production cost to be lowered in some cases.
    Type: Application
    Filed: August 19, 2022
    Publication date: June 15, 2023
    Applicant: President and Fellows of Harvard College
    Inventors: Donhee Ham, Wenxuan Wu, Jeffrey T. Abbott, Henry Julian Hinton, Hongkun Park
  • Publication number: 20230189673
    Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
    Type: Application
    Filed: February 10, 2023
    Publication date: June 15, 2023
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun LEE, Houk JANG, Donhee HAM, Chengye LIU, Henry Julian HINTON, Haeryong KIM, Hyeonjin SHIN
  • Patent number: 11600774
    Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
    Type: Grant
    Filed: November 10, 2020
    Date of Patent: March 7, 2023
    Assignees: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Minhyun Lee, Houk Jang, Donhee Ham, Chengye Liu, Henry Julian Hinton, Haeryong Kim, Hyeonjin Shin
  • Publication number: 20220147799
    Abstract: Disclosed is a neural computer including an image sensor capable of controlling a photocurrent. The neural computer according to an embodiment includes a preprocessor configured to receive an image and generate a feature map for the received image; a flattening unit configured to transform the feature map generated by the preprocessor into tabular data to provide data output; and an image classifier configured to classify images received through the preprocessor by using the data output by the flattening unit as an input value. The preprocessor includes an optical signal processor configured to receive the image and generate the feature map.
    Type: Application
    Filed: October 13, 2021
    Publication date: May 12, 2022
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Changhyun KIM, Houk JANG, Henry Julian HINTON, Hyeonjin SHIN, Minhyun LEE, Donhee HAM