Patents by Inventor Henry Kwong-Hin Choy
Henry Kwong-Hin Choy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10734553Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.Type: GrantFiled: December 14, 2018Date of Patent: August 4, 2020Assignee: Lumileds LLCInventors: Jonathan J. Wierer, Aurelien Jean Francois David, Henry Kwong-Hin Choy
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Publication number: 20190280161Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.Type: ApplicationFiled: December 14, 2018Publication date: September 12, 2019Applicant: Lumileds LLCInventors: Jonathan J. WIERER, Aurelien Jean Francois DAVID, Henry Kwong-Hin CHOY
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Patent number: 10164155Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.Type: GrantFiled: October 31, 2017Date of Patent: December 25, 2018Assignee: Lumileds LLCInventors: Jonathan J. Wierer, Aurelien Jean Francois David, Henry Kwong-Hin Choy
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Patent number: 10134964Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: May 29, 2013Date of Patent: November 20, 2018Assignee: LUMILEDS LLCInventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 9935242Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: August 27, 2015Date of Patent: April 3, 2018Assignee: Lumileds LLCInventors: Jonathan J. Wierer, Aurelien Jean Francois David, Henry Kwong-Hin Choy
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Publication number: 20180053880Abstract: A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.Type: ApplicationFiled: October 31, 2017Publication date: February 22, 2018Applicant: Lumileds LLCInventors: Jonathan J. WIERER, Aurelien Jean Francois DAVID, Henry Kwong-Hin CHOY
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Publication number: 20150364654Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: ApplicationFiled: August 27, 2015Publication date: December 17, 2015Inventors: Jonathan J. WIERER, Aurelien Jean Francois DAVID, Henry Kwong-Hin CHOY
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Patent number: 9142726Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: July 3, 2012Date of Patent: September 22, 2015Assignee: Philips Lumileds Lighting Company LLCInventors: Aurelien J. F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, Jr.
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Publication number: 20130252358Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: May 29, 2013Publication date: September 26, 2013Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge L. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Patent number: 8471282Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: GrantFiled: June 7, 2010Date of Patent: June 25, 2013Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Frederic S. Diana, Henry Kwong-Hin Choy, Qingwei Mo, Serge I. Rudaz, Frank L. Wei, Daniel A. Steigerwald
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Publication number: 20120267668Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: ApplicationFiled: July 3, 2012Publication date: October 25, 2012Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Aurelien J.F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, JR.
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Patent number: 8242521Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: June 16, 2011Date of Patent: August 14, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company LLCInventors: Aurelien J. F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, Jr.
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Publication number: 20110297979Abstract: In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.Type: ApplicationFiled: June 7, 2010Publication date: December 8, 2011Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Frederic S. DIANA, Henry Kwong-Hin CHOY, Qingwei MO, Serge L. RUDAZ, Frank L. WEI, Daniel A, STEIGERWALD
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Publication number: 20110241056Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: ApplicationFiled: June 16, 2011Publication date: October 6, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Aurelien J.F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer, JR.
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Patent number: 7985979Abstract: Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a low index material that directs light away from the metal contacts by total internal reflection. In some embodiments, the device includes extraction features such as cavities in the semiconductor structure which may extract glancing angle light directly, or direct the glancing angle light into smaller incidence angles which are more easily extracted from the device.Type: GrantFiled: December 19, 2007Date of Patent: July 26, 2011Assignees: Koninklijke Philips Electronics, N.V., Philips Limileds Lighting Company LLCInventors: Aurelien J. F. David, Henry Kwong-Hin Choy, Jonathan J. Wierer
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Patent number: 7977132Abstract: Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies.Type: GrantFiled: May 6, 2009Date of Patent: July 12, 2011Assignees: Koninklijke Philips Electronics N.V., Philps Lumileds Lighting Company, LLCInventors: Tal Margalith, Stefano Schiaffino, Henry Kwong-Hin Choy
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Publication number: 20110136273Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.Type: ApplicationFiled: February 17, 2011Publication date: June 9, 2011Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Henry Kwong-Hin Choy, Daniel A. Steigerwald
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Publication number: 20110018013Abstract: A light-emitting diode (LED) is fabricated by forming the LED segments with bond pads covering greater than 85% of a mounting surface of the LED segments and isolation trenches that electrically isolate the LED segments, mounting the LED segments on a submount with a bond pad that couples two or more bond pads from the LED segments, and applying a laser lift-off to remove the growth substrate from the LED layer.Type: ApplicationFiled: July 21, 2009Publication date: January 27, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Tal MARGALITH, Henry Kwong-Hin CHOY, John E. EPLER, Stefano SCHIAFFINO
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Publication number: 20100283080Abstract: Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies.Type: ApplicationFiled: May 6, 2009Publication date: November 11, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Tal MARGALITH, Stefano SCHIAFFINO, Henry Kwong-Hin CHOY
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Publication number: 20090250713Abstract: A light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A contact is formed on the semiconductor structure, the contact comprising a reflective metal in direct contact with the semiconductor structure and an additional metal or semi-metal disposed within the reflective metal. In some embodiments, the additional metal or semi-metal is a material with higher electronegativity than the reflective metal. The presence of the high electronegativity material in the contact may increase the overall electronegativity of the contact, which may reduce the forward voltage of the device. In some embodiments, an oxygen-gathering material is included in the contact.Type: ApplicationFiled: April 4, 2008Publication date: October 8, 2009Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Henry Kwong-Hin Choy, Daniel A. Steigerwald