Abstract: An apparatus and method for signaling and transmitting data through an optical link is described. The apparatus may include a connector including a first plurality of contacts compatible with an enhanced SFP (SFP+) connector. The connector further includes an additional contact formed at a space adjacent to the first plurality of contacts. A tone generator couples to the additional contact to receive a first signal and to generate a first distinct tone indicative of the first signal for transmission via the additional contact. The method may include generating a first distinct tone indicative of a first signal providing control or status of an apparatus and transmitting or receiving a differential data signal over a portion of a first plurality of contacts compatible with an enhanced SFP (SFP+) connector. The first distinct tone is transmitted over the additional contact formed in a space adjacent to the first plurality of contacts.

Abstract: Embodiments are disclosed for shielding of an optical element of an imaging device in a mobile device. In an embodiment, an imaging device includes: an optical element; a metallic shielding enclosure, wherein the optical element is partially located within the metallic shielding enclosure; an electrically conductive coating layer applied on a surface of the optical element that is outside the metallic shielding enclosure, wherein the electrically conductive coating layer is electrically connected to the metallic shielding enclosure.

Abstract: An apparatus and method for signaling and transmitting data through an optical link is described. The apparatus may include a connector including a first plurality of contacts compatible with an enhanced SFP (SFP+) connector. The connector further includes an additional contact formed at a space adjacent to the first plurality of contacts. A tone generator couples to the additional contact to receive a first signal and to generate a first distinct tone indicative of the first signal for transmission via the additional contact. The method may include generating a first distinct tone indicative of a first signal providing control or status of an apparatus and transmitting or receiving a differential data signal over a portion of a first plurality of contacts compatible with an enhanced SFP (SFP+) connector. The first distinct tone is transmitted over the additional contact formed in a space adjacent to the first plurality of contacts.

Abstract: An example embodiment includes a fiber optic integrated circuit (IC). The fiber optic IC includes an integrated power supply. The integrated power supply includes a filter, an active switch, and a pulse width modulator (“PWM”). The filter is configured to convert a signal to an output signal of the integrated power supply. The active switch is configured to control introduction of the signal to the filter. The PWM is configured to generate a PWM output signal that triggers the active switch.

Abstract: In one example embodiment, a transmitter module includes a header electrically coupled to a chassis ground. First and second input nodes are configured to receive a differential data signal. A buffer stage has a first node coupled to the first input node and a second node coupled to the second input node. An amplifier stage has a fifth node coupled to a third node of the buffer stage and a sixth node coupled to a signal ground that is not coupled to the chassis ground. An optical transmitter has an eighth node coupled to a seventh node of the amplifier stage and a ninth node configured to be coupled to a voltage source. A bias circuit is configured to couple a fourth node of the buffer stage to a bias current source.

Abstract: An example embodiment includes a fiber optic integrated circuit (IC). The fiber optic IC includes an integrated power supply. The integrated power supply includes a filter, an active switch, and a pulse width modulator (“PWM”). The filter is configured to convert a signal to an output signal of the integrated power supply. The active switch is configured to control introduction of the signal to the filter. The PWM is configured to generate a PWM output signal that triggers the active switch.

Abstract: An example embodiment includes a fiber optic integrated circuit (IC). The fiber optic IC includes an integrated power supply. The integrated power supply includes a filter, an active switch, and a pulse width modulator (“PWM”). The filter is configured to convert a signal to an output signal of the integrated power supply. The active switch is configured to control introduction of the signal to the filter. The PWM is configured to generate a PWM output signal that triggers the active switch.

Abstract: In one example embodiment, a transmitter module includes a header electrically coupled to a chassis ground. First and second input nodes are configured to receive a differential data signal. A buffer stage has a first node coupled to the first input node and a second node coupled to the second input node. An amplifier stage has a fifth node coupled to a third node of the buffer stage and a sixth node coupled to a signal ground that is not coupled to the chassis ground. An optical transmitter has an eighth node coupled to a seventh node of the amplifier stage and a ninth node configured to be coupled to a voltage source. A bias circuit is configured to couple a fourth node of the buffer stage to a bias current source.

Abstract: In one example embodiment, a transmitter module includes a header electrically coupled to a chassis ground. First and second input nodes are configured to receive a differential data signal. A buffer stage has a first node coupled to the first input node and a second node coupled to the second input node. An amplifier stage has a fifth node coupled to a third node of the buffer stage and a sixth node coupled to a signal ground that is not coupled to the chassis ground. An optical transmitter has an eighth node coupled to a seventh node of the amplifier stage and a ninth node configured to be coupled to a voltage source. A bias circuit is configured to couple a fourth node of the buffer stage to a bias current source.

Abstract: An integrated circuit may include a signal generator configured to generate a switching signal and a switching unit coupled to the signal generator. The switching unit may be configured to generate a pulsed current based on the switching signal using a first voltage. The integrated circuit may also include an inductive unit coupled to the switching unit. The inductive unit may be configured to receive the pulsed current and to generate a second voltage different from the first voltage.

Abstract: In one example embodiment, a transmitter module includes a header electrically coupled to a chassis ground. First and second input nodes are configured to receive a differential data signal. A buffer stage has a first node coupled to the first input node and a second node coupled to the second input node. An amplifier stage has a fifth node coupled to a third node of the buffer stage and a sixth node coupled to a signal ground that is not coupled to the chassis ground. An optical transmitter has an eighth node coupled to a seventh node of the amplifier stage and a ninth node configured to be coupled to a voltage source. A bias circuit is configured to couple a fourth node of the buffer stage to a bias current source.

Abstract: Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

Abstract: Detection of ionizing radiation with modulation doped field effect transistors (MODFETs) is provided. There are two effects which can occur, separately or together. The first effect is a direct effect of ionizing radiation on the mobility of electrons in the 2-D electron gas (2DEG) of the MODFET. An ionizing radiation absorption event in or near the MODFET channel can perturb the 2DEG mobility to cause a measurable effect on the device conductance. The second effect is accumulation of charge generated by ionizing radiation on a buried gate of a MODFET. The conductance of the MODFET can be made sensitive to this accumulated charge, thereby providing detection of ionizing radiation. 1-D or 2-D arrays of MODFET detectors can be employed to provide greater detection area and/or spatial resolution of absorption events. Such detectors or detector pixels can be integrated with electronics, such as front-end amplification circuitry.

Abstract: An integrated circuit may include a signal generator configured to generate a switching signal and a switching unit coupled to the signal generator. The switching unit may be configured to generate a pulsed current based on the switching signal using a first voltage. The integrated circuit may also include an inductive unit coupled to the switching unit. The inductive unit may be configured to receive the pulsed current and to generate a second voltage different from the first voltage.

Abstract: An optoelectronic device having an intelligent transmitter module (“ITM”) includes a mechanism for logging operational information regarding the ITM. The optoelectronic device includes a microcontroller and a persistent memory. The microcontroller is configured to identify the operational information, and write log information representing the operational information to the persistent memory. The operational information may include statistical data about operation, or may include measured parameters. Log entries may be made periodically and/or in response to events. The log may then be evaluated to determine the conditions under which the ITM has historically operated.

Abstract: A small-scale VOA system includes a polarization rotator, a voltage multiplier circuit, and at least one transistor. The polarization rotator can be positioned within a TOSA along the emission axis of a corresponding optical signal source in addition to one or more polarizers. A microcontroller provides a first low voltage control signal to a voltage multiplier to generate a large voltage DC signal which is provided to the transistor. The transistor modulates the large voltage signal with a second control signal from the microcontroller to generate a large voltage AC signal for driving the polarization rotator. The polarization rotation of the polarization rotator can be altered depending on the applied large-voltage AC signal. As a result, the polarization rotator and one or more polarizers can variably attenuate signals emitted by the optical signal source or act as a shutter.

Abstract: Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

Abstract: Detection of ionizing radiation with modulation doped field effect transistors (MODFETs) is provided. There are two effects which can occur, separately or together. The first effect is a direct effect of ionizing radiation on the mobility of electrons in the 2-D electron gas (2DEG) of the MODFET. An ionizing radiation absorption event in or near the MODFET channel can perturb the 2DEG mobility to cause a measurable effect on the device conductance. The second effect is accumulation of charge generated by ionizing radiation on a buried gate of a MODFET. The conductance of the MODFET can be made sensitive to this accumulated charge, thereby providing detection of ionizing radiation. 1-D or 2-D arrays of MODFET detectors can be employed to provide greater detection area and/or spatial resolution of absorption events. Such detectors or detector pixels can be integrated with electronics, such as front-end amplification circuitry.

Abstract: Monolithic single and/or dual detector structures are fabricated on the emitting surface of a VCSEL and/or on a lens or glass substrate configured to be positioned along the axis of emission of an optical light source. Each monolithic detector structure includes one or two PIN detectors fabricated from amorphous silicon germanium with carbon doping or amorphous germanium with hydrogen doping. The monolithic detectors may additionally include various metallization layers, buffer layers, and/or anti-reflective coatings. The monolithic detectors can be grown on 1550 NM VCSELs used in optical transmitters, including lasers with managed chirp and TOSA modules, to reduce power and real estate requirements of the optical transmitters, enabling the optical transmitters to be implemented in long-reach SFP+ transceivers.

Abstract: An intelligent transmitter module (“ITM”) includes a CDR circuit for equalizing and retiming an electrical data signal, a driver for generating a modulation signal and/or performing waveform shaping of the equalized and retimed signal, and an optical transmitter configured to emit an optical signal representative of the data signal. A linear amplifier may also be included to amplify the modulation signal when the optical transmitter is a laser with managed chirp. Alternately or additionally, a microcontroller with a 14-bit or higher A2D can be included to control and optimize operation of the ITM. In one embodiment, the CDR, driver, linear amplifier, and/or microcontroller are flip chip bonded to a first substrate while the laser with managed chirp is bonded to a second substrate. The first substrate may comprise a multi-layer high frequency laminate.